Abstract:SiC metal–oxide–semiconductor field-effect transistor (MOSFET) has a fast switching speed and high slew rate. However, its ultrashort switching time approximates the rise time and propagation delay of the measurement instruments, which results in an inaccurate assessment of the switching loss and challenges the thermal design of the power converter. In this article, aiming to reveal the principles of accurate measurement for the switching behavior of SiC MOSFET, insightful models are proposed for baseline probes and transient trajectories to characterize the measurement error of the switching losses. By using the Gaussian function, the mathematical models for the rise time, bandwidth, and propagation delay of the measurement instruments are achieved, which is also confirmed by the surveyed specifications of commercial probes. Concerning the accurate measurement, the turn-on and turn-off losses of the SiC MOSFET influenced by the rise time and propagation delay of probes are comprehensively modeled and characterized. With respect to different current probes, voltage probes, and gate driver resistances, extensive experiments are demonstrated to confirm the validity of the proposed models. The experimental findings are in line with the conducted predictions of the proposed models. It is found that, due to the very fast switching transients of the SiC MOSFET, the limited bandwidth and inevitable propagation delay of measurement instrument may result in a prominent error of the switching loss and impede the widespread implementation of the SiC MOSFET.

A Design Model of Soft Turn-off Protection for SiC MOSFETs

Design and Performance Evaluation of a Short-circuit Protection Scheme for SiC MOSFETs

A Temperature-Dependent Analytical Model of SiC MOSFET Short-Circuit Behavior Considering Parasitic Parameters

Investigation of the Effects of Snubber Capacitors on Turn-on Overvoltage of SiC MOSFETs

Analysis and Suppression for Crosstalk in SiC MOSFET Turn-off Transient

Analytical Model to Study Hard Turn-off Switching Dynamics of SiC mosfet and Schottky Diode Pair

Accurate Analytical Switching-On Loss Model of SiC MOSFET Considering Dynamic Transfer Characteristic and <i>Q</i><sub>gd</sub>

A Junction Temperature-based PSpice Short-circuit Model of SiC MOSFET Considering Leakage Current

A Semiphysical Semibehavioral Analytical Model for Switching Transient Process of SiC MOSFET Module

An Analytical Approach for Evaluating Turn-On Switching Losses in SiC MOSFET With Kelvin Pin: Concept and Implementation

Short-Circuit Fault Adaptive Analysis and Protection for SiC MOSFETs

Accurate Time-segmented Loss Model for SiC MOSFETs in Electro-thermal Multi-Rate Simulation

An Active Gate Driver Design to Reduce Voltage and Current Overshoots for SiC MOSFET Modules

Improved Short-Circuit Protection Method for SiC MOSFET Split-Output Power Module Achieving Ultra-Low Fault Dissipated Energy

A High Speed Short-Circuit Protection Circuit with Current Limitation and Soft Turn-Off for High Power IGBTs

A Behavior Model of SiC DMOSFET Considering Thermal-Runaway Failures in Short-Circuit and Avalanche Breakdown Faults

Modeling of SiC MOSFET with temperature dependent parameters and its applications

A Method To Model Mosfet'S Second Breakdown Action For Circuit-Level Esd Simulation

Inaccurate Switching Loss Measurement of SiC MOSFET Caused by Probes: Modelization, Characterization, and Validation

Switching Losses Model of SiC MOSFET

Analytical Methodology for Loss Calculation of SiC MOSFETs