Abstract:Silicon carbide (SiC) power devices possess many beneficial properties for power electronics applications, but commercial 62-mm SiC power module packages with the direct drop-in replacement of Si devices limit many benefits of these SiC power devices. To fully utilize the advantages of the SiC power devices, this article presents a low-profile and high power density packaging solution of a 62-mm 1200-V/300-A SiC power module with enhanced electrical and thermal performance. The design optimizations on layout, chip placement, and terminal structure are compatible with the conventional module fabrication processes. An increase of power density by threefold is achieved with a low-profile package by reducing the height of the terminal connectors. Moreover, lower voltage overshoots of gate–source and drain–source of the proposed module are demonstrated due to low inductance in both gate and power loops. Thermal simulations show that the proposed module has a lower peak junction temperature and a more balanced temperature distribution among paralleled devices. Finally, the commercial and fabricated modules are characterized experimentally under the same conditions. Both simulation and experimental results show that the gate and power loop inductances of the proposed module are reduced by 96% and 76%, respectively. Moreover, the total switching loss and drain–source voltage overshoot are reduced by 44% and 54%, respectively, at 300 A using a 2- $Omega $ external gate resistor.

A Novel Substrate-Baseplate Structure for Medium Voltage SiC MOSFET Device

Structure and the Thermal Management of a 3-D Silicon Carbide MOSFET Module

Design and evaluation of press-pack SiC MOSFET

Fan-Out Panel-Level PCB-Embedded SiC Power MOSFETs Packaging

Analysis of Novel Packaging Techniques for High Power Electronics in SiC

A Solution to Press-Pack Packaging of SiC MOSFETS

A New SiC Split-gate MOSFET Structure with Protruded P-base and the Mesa above JFET for Improving HF-FOM

Novel Designed SiC Devices for High Power and High Efficiency Systems

A Novel Deep-Trench Super-Junction SiC MOSFET with Improved Specific On-Resistance

A New SiC Trench MOSFET Structure With Protruded p-Base for Low Oxide Field and Enhanced Switching Performance

Investigation of Low-Profile, High-Performance 62-mm SiC Power Module Package

SiC Trench MOSFET with Reduced Switching Loss and Increased Short-Circuit Capability

A Novel SiC Trench MOSFET Structure with Enhanced Short Circuit Robustness

A High-Performance SiC Super-Junction MOSFET With a Step-Doping Profile

Layout of Series-connected SiC MOSFET Devices for Medium Voltage Applications

Integrated Junction Barrier Schottky Diode and MOS-Channel Diode in SiC Planar MOSFETs for Optimization of Reverse Performances

A Highly Integrated Multichip SiC MOSFET Power Module With Optimized Electrical and Thermal Performances

Theoretical Analysis and Experimental Characterization of 1.2-kV 4H-SiC Planar Split-Gate MOSFET With Source Field Plate

High performance SiC trench-type MOSFET with an integrated MOS-channel diode

Design Optimization and Reliability Evaluation in 1.2 kV SiC Trench MOSFET with Deep P Structure

4.87 kV SiC MOSFET Using HfSiOx/SiO2 Gate Dielectrics Combined with PN Pillars