Abstract:Although the body diode of SiC MOSFET has excellent surge capability, the reliability issues about commercial SiC MOSFET under repetitive surge current stress of body diode haven't been studied thoroughly. In this work, repetitive surge current stress is applied to the body diode of commercial SiC trench MOSFET, and the surge tests are conducted under different gate biases and ambient temperatures. It is found that no bipolar degradation occurs in the body diode but degradation phenomena of gate oxide and package are observed in devices under tests (DUTs). At room temperature, the threshold voltage (VT8) related to gate oxide degradation degrades more seriously at a negative gate bias of -5V than at 0V. At 0V gate bias, gate oxide and package degenerate more severely at /25°C than at 25°C. The evolution of on-state resistance (R DSON ) during the tests is influenced by the competitive mechanism between gate oxide degradation and package degradation. As a result, gate oxide degradation causes R DSON to reduce while package degradation makes R DSON rise. Meanwhile, the competitive mechanism is deeply influenced by the gate bias voltage and ambient temperature. The failure analysis shows that all DUTs fail with gate and source terminal shorted, which is mainly attributed to high junction temperature.

Study of Current Density Influence on Bond Wire Degradation Rate in SiC MOSFET Modules

Separation test method for investigation of current density effects on bond wires of SiC power MOSFET modules

Reliability Investigation on SiC Trench MOSFET under Repetitive Surge Current Stress of Body Diode

Reliability Analysis for Commercial SiC MOSFETs in Single Pulse and Repetitive Surge Current Test

Aging Diagnosis of Bond Wire Using On-State Drain-Source Voltage Separation for SiC MOSFET

Analysis of Novel Packaging Techniques for High Power Electronics in SiC

Comparative Investigation on Aging Precursor and Failure Mechanism of Commercial SiC MOSFETs Under Different Power Cycling Conduction Modes

Investigations on the Degradation of 1.2-Kv 4H-Sic Mosfets under Repetitive Short-Circuit Tests

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver

Role of Threshold Voltage Shift in Highly Accelerated Power Cycling Tests for SiC MOSFET Modules

Competitive Failures Decoupling and Mechanisms Analysis of SiC MOSFET Module Under Power Cycling Stress

Power Cycling Modeling and Lifetime Evaluation of SiC Power MOSFET Module Using a Modified Physical Lifetime Model

Failure Mechanism Analysis of 1.2 kV SiC MOSFETs Under Low-Temperature Storage, Power Cycling, and Short-Circuit Interactions

A Decoupled Junction Temperature and Aging Level Evaluating Method for SiC MOSFETs

Investigation of the bipolar degradation of SiC MOSFET body diodes and the influence of current density

A Deep Insight into the Degradation of 1.2-Kv 4H-Sic Mosfets under Repetitive Unclamped Inductive Switching Stresses

Real-Time Extraction of SiC mosfets' Degradation Features Under Improved Accelerated Power Cycling Tests for DC-SSPC Application

Investigation on the Degradation Mechanism for SiC Power MOSFETs Under Repetitive Switching Stress

Investigation on Degradation of SiC MOSFET Under Accelerated Stress in a PFC Converter

Degradation of 650 V SiC double-trench MOSFETs under repetitive overcurrent switching stress