Abstract:In this paper, the operation mechanism of trench termination is investigated through 2-D numeric simulation on Silvaco. It is found that in trench termination, the electric field is terminated by the accumulated holes at the outer trench sidewall. In order to ensure a high termination breakdown voltage, the trench is refilled with a combination of SiO<sub>2</sub> and polyimide (PI). Through various 2-D numerical simulations, the impact of structural parameters on breakdown voltage has been discussed, namely, trench depth (TD), trench width (TW), and sidewall tilt angle. The 3-D simulations are also conducted to investigate the effect of round corner radius on the device breakdown voltage and electric field in the dielectrics. Based on these results, the trench termination is designed and then fabricated along with a p-i-n diode. The measurement results show that a $14~mu text{m}$ wide trench is sufficient to terminate a voltage of 1750V (>96% of the ideal planar breakdown). Comparing with conventional field limiting rings junction termination extension (FLR/JTE) technology, this trench termination can significantly reduce the termination length by a factor of 4. As a result, the area efficiency is largely improved from 62% to around 90% for a 2A device conducting at 1000 A/cm<sup>2</sup>. These results indicate that the SiC device price can be substantially lowered with such an area-efficient trench termination technology. Furthermore, the 168-h high-temperature reverse bias (HTRB) test under 1200 V and 175 °C shows the potential of this trench termination for long-term reliable operation. Finally, unclamped inductive switching (UIS) tests have been conducted on fabricated devices. Compared to commercial SiC junction barrier Schottky diodes with FLR, fabricated p-i-n diodes with trench termination -how significant higher avalanche capability.

Hybrid Termination with Wide Trench for 4H-Sic Super-Junction Devices

Design and Characterization of Area-Efficient Trench Termination for 4H-SiC Devices

Design and Fabrication of 1.92 Kv 4H-Sic Super-Junction SBD with Wide-Trench Termination

An Improved Composite JTE Termination Technique for Ultrahigh Voltage 4H-Sic Power Devices

A New Edge Termination Technique for High-Voltage Devices in 4H-Sic–multiple-floating-zone Junction Termination Extension

Improved Etched Multistep JTE for UHV SiC Power Devices

High-k Dielectric Assisted Trench Termination of the 4H-SiC Super Junction Device for Improved Avalanche Capability

Trench Termination with SiO2-Encapsulated Dielectric for Near-Ideal Breakdown Voltage in 4H-Sic Devices

Bevel Junction Termination Extension—A New Edge Termination Technique for 4H-Sic High-Voltage Devices

Etched Junction Termination Extension With Floating Guard Rings And Middle Rings For Ultrahigh-Voltage 4h-Sic Pin Diodes

4.15 Kv / 4.6 Mω·cm2 4H-Sic Epi-refilled Super-Junction Schottky Diode with Ring Assisted Super-Junction Termination Extension

Development of G10kv 4H-Sic SBD Junction Extension Termination

Multi-Step Junction Termination Extension Design and Simulation Study for 4H-Sic Schottky Barrier Diode

4H-Sic Super-Junction JFET: Design and Experimental Demonstration

Implantation-free SiC Thyristor with Single-Mask 3D Termination Near 10 Kv

Expanding the Dose Window of Step-Etched Space-Modulated JTE for Ultrahigh Voltage 4H-Sic Devices

4H-Sic Trench-gate MOSFET with JTE Termination

Sidewall-Implanted Trench Termination for 4H-SiC Devices With High Breakdown Voltage and Low Leakage Current

Design and Simulation of 600V 4H-Sic Superjunction JBS Diode

Performance Analysis of 4H-Sic Super-Junction Devices: Impact of Trench Angle and Improvement with Multi-Epi Structure

4H-Sic BJTs with Epitaxial Junction Termination Composite Structure