Abstract:As a representative wide bandgap semiconductor material, gallium nitride (GaN) has attracted increasing attention because of its superior material properties (e.g., high electron mobility, high electron saturation velocity, and critical electric field). Vertical GaN devices have been investigated, are regarded as one of the most promising candidates for power electronics application, and are characterized by the capacity for high voltage, high current, and high breakdown voltage. Among those devices, vertical GaN-based PN junction diode (PND) has been considerably investigated and shows great performance progress on the basis of high epitaxy quality and device structure design. However, its device epitaxy quality requires further improvement. In terms of device electric performance, the electrical field crowding effect at the device edge is an urgent issue, which results in premature breakdown and limits the releasing superiorities of the GaN material, but is currently alleviated by edge termination. This review emphasizes the advances in material epitaxial growth and edge terminal techniques, followed by the exploration of the current GaN developments and potential advantages over silicon carbon (SiC) for materials and devices, the differences between GaN Schottky barrier diodes (SBDs) and PNDs as regards mechanisms and features, and the advantages of vertical devices over their lateral counterparts. Then, the review provides an outlook and reveals the design trend of vertical GaN PND utilized for a power system, including with an inchoate vertical GaN PND.

First Demonstration of Vertical Superjunction Diode in GaN

Vertical GaN Schottky Barrier Diode with Hybrid PNiO Junction Termination Extension

Vertical GaN-on-GaN Trench Junction Barrier Schottky Diodes with a Slanted Sidewall

Lateral P-Gan/2deg Junction Diodes By Selective-Area P-Gan Trench-Filling-Regrowth In Algan/Gan

Demonstration of nonpolar m-plane vertical GaN-on-GaN p-n power diodes grown on free-standing GaN substrates

First Demonstration of RESURF and Superjunction SS- Ga2O3 MOSFETs with P-Nio/n- Ga2O3 Junctions

Vertical GaN-on-GaN PIN Diodes Fabricated on Free-Standing GaN Wafer Using an Ammonothermal Method

Fully-Vertical GaN-on-SiC Schottky Barrier Diode: Role of Conductive Buffer Structure

Vertical GaN-on-GaN P-N Diodes with 10-A Forward Current and 1.6 Kv Breakdown Voltage

0.58 Mω;cm2/523 V GaN Vertical Schottky Barrier Diode with 15.6 Ka/cm2; Surge Current Enabled by Laser Lift-Off/ Annealing and N-Ion Implantation

Fully Vertical GaN-on-SiC p-i-n Diodes With BFOM of 2.89 GW/cm2

Demonstration of N-Ga2o3/p-gan Diodes by Wet-Etching Lift-Off and Transfer-Print Technique

High Voltage Vertical P-N Diodes with Ion-Implanted Edge Termination and Sputtered SiNx Passivation on GaN Substrates

Review of Recent Progress on Vertical GaN-Based PN Diodes

Vertical power diodes based on bulk GaN substrates

Demonstration of Β-Ga₂o₃ Superjunction-Equivalent MOSFETs

2.41 Kv Vertical P-Nio/n-ga2o3 Heterojunction Diodes with a Record Baligas Figure-of-Merit of 5.18 GW/cm2

0.58 mΩ·cm<sup>2</sup>/523 V GaN Vertical Schottky Barrier Diode with 15.6 kA/cm<sup>2</sup> Surge Current Enabled by Laser Lift-Off/Annealing and N-Ion Implantation

High Performance Quasi-Vertical GaN Junction Barrier Schottky Diode with Zero Reverse Recovery and Rugged Avalanche Capability

Demonstration and Modeling of Unipolar-Carrier-conduction GaN Schottky-pn Junction Diode with Low Turn-on Voltage

Demonstration of Vertical GaN Schottky Barrier Diode with Robust Electrothermal Ruggedness and Fast Switching Capability by Eutectic Bonding and Laser Lift-Off Techniques