Abstract:As an attractive next generation ultrawide bandgap material, Ga2O3 has been demonstrated to be capable of high voltage operation. However, the lack of shallow p-type dopant in Ga2O3 leads to difficulties in developing Ga2O3 based bipolar devices. The semiconductor grafting technology, by bonding a single crystalline p-type semiconductor nanomembrane (NM) to n-Ga2O3 to from abrupt heterojunction, offers a way to expand the application of Ga2O3 in bipolar areas. In this Letter, we report a p-GaAs/(001)-Ga2O3 heterojunction diode fabricated using semiconductor grafting technology. The single crystalline GaAs NM was prepared and transferred onto a Ga2O3 substrate, showing good integrity. Diodes of a mesa diameter of 25 μm were fabricated, showing a high breakdown voltage of ∼800 V, a power figure of merit of 126.5 MW/cm2, and a calculated 1D peak electric field of 1.60 MV/cm. The turn on voltage of the diode was determined to be around 1.91 V with an on–off ratio to be 6 × 106 at −4/4 V and the specific on resistance to be 5.06 mΩ cm2. The ideality factor was extracted to be approximately 1.34, indicating reasonable interface quality. The interfacial defects and the self-passivation effects of Ga2O3 are discussed, and the theoretical band diagram was analyzed for the p-GaAs/n-Ga2O3 heterojunction. By managing the peak electric field with suitable edge termination techniques, higher breakdown voltage can be expected. In addition, by taking advantage of the InGaAsP alloy system, a wide variety of GaAs-Ga2O3 based high voltage HBT can be further developed.

Demonstration of N-Ga2o3/p-gan Diodes by Wet-Etching Lift-Off and Transfer-Print Technique

Fabrication on n-Ga<sub>2</sub>O<sub>3</sub>/p-GaN diode by wet-etching lift-off and transfer-print

A P-Si/n-gan Diode Fabricated by Nanomembrane Lift-off and Transfer-Print Technique

Demonstration of a monocrystalline GaAs-$β$-Ga$_2$O$_3$ p-n heterojunction

Monocrystalline Si/$β$-Ga$_2$O$_3$ p-n heterojunction diodes fabricated via grafting

Initial demonstration of AlGaAs-GaAsP-beta-Ga2O3 n-p-n double heterojunctions

Β-Ga2o3 Van Der Waals P-N Homojunction

Lateral P-Gan/2deg Junction Diodes By Selective-Area P-Gan Trench-Filling-Regrowth In Algan/Gan

Demonstration of the P-Niox/n-ga2o3 Heterojunction Gate FETs and Diodes with BV2/Ron,sp Figures of Merit of 0.39 GW/cm2 and 1.38 GW/cm2

Demonstration of nonpolar m-plane vertical GaN-on-GaN p-n power diodes grown on free-standing GaN substrates

Demonstration of Thin-Film GaN Schottky Diodes Fabricated with Epitaxial Lift-off

Over 1.8 GW/cm(2) beveled-mesa NiO/beta-Ga2O3 heterojunction diode with 800 V/10 A nanosecond switching capability

Full β-Ga2O3 films-based p-n homojunction

Characteristics of grafted monocrystalline Si/ β -Ga2O3 p – n heterojunction

Demonstration of Ni/NiOx/β-Ga2O3 Heterojunction Diode with F Plasma Pre-Treatment for Reducing On-Resistance and Reverse Leakage Current

Single-crystalline GaAs/Si Heterojunction Tunnel Diodes Interfaced by an Ultrathin Oxygen-enriched Layer

Demonstration of Vertical GaN Schottky Barrier Diode with Robust Electrothermal Ruggedness and Fast Switching Capability by Eutectic Bonding and Laser Lift-Off Techniques

p-GaAs/n-Ga2O3 heterojunction diode with breakdown voltage of ∼800 V

Performance Enhancement of NiOx/β-Ga2O3 Heterojunction Diodes by Synergistic Interface Engineering

A 1.86-Kv Double-Layered NiO/ Β -Ga2o3 Vertical P–n Heterojunction Diode

Performance Enhancement of NiO $_{\textit{x}}$ / $\beta$ -Ga $_{\text{2}}$ O $_{\text{3}}$ Heterojunction Diodes by Synergistic Interface Engineering