Abstract:Vertical $pn$ heterojunction diodes were prepared by plasma-assisted molecular beam epitaxy of unintentionally-doped $p$-type SnO layers with hole concentrations ranging from $p=10^{18}$ to $10^{19}$cm$^{-3}$ on unintentionally-doped $n$-type $\beta$-Ga$_{2}$O$_{3}$(-201) substrates with an electron concentration of $n=2.0\times10^{17}$cm$^{-3}$. The SnO layers consist of (001)-oriented grains without in-plane expitaxial relation to the substrate. After subsequent contact processing and mesa etching (which drastically reduced the reverse current spreading in the SnO layer and associated high leakage) electrical characterization by current-voltage and capacitance-voltage measurement was performed. The results reveal a type-I band alignment and junction transport by thermionic emission in forward bias. A rectification of $2\times10^{8}$ at $\pm1$V, an ideality factor of 1.16, differential specific on-resistance of 3.9m$\Omega\thinspace$cm$^{2}$, and built-in voltage of 0.96V were determined. The $pn$-junction isolation prevented parallel conduction in the highly-conductive Ga$_{2}$O$_{3}$ substrate (sheet resistance $R_{S}\approx3\thinspace\Omega$) during van-der-Pauw Hall measurements of the SnO layer on top ($R_{S}\approx150$k$\Omega$, $p\approx2.5\times10^{18}$cm$^{-3}$, Hall mobility $\approx1$cm$^{2}$/Vs). The measured maximum reverse breakdown voltage of the diodes was 66V, corresponding to a peak breakdown field 2.2MV/cm in the Ga$_{2}$O$_{3}$-depletion region. Higher breakdown voltages that are required in high-voltage devices could be achieved by reducing the donor concentration in the $\beta$-Ga$_{2}$O$_{3}$ to increase the depletion width as well as improving the contact geometry to reduce field crowding.

Vertical Field-Plated NiO/Ga2O3 Heterojunction Power Diodes

Field-Plated NiO/Ga2O3 P-N Heterojunction Power Diodes with High-Temperature Thermal Stability and Near Unity Ideality Factors

A 1.86-Kv Double-Layered NiO/ Β -Ga2o3 Vertical P–n Heterojunction Diode

2Kv Low Leakage Vertical NiO/β-Ga2O3 Hetero-Junction Diode and Its Thermal/Electrical Stability

Β-Ga2o3 Vertical Heterojunction Barrier Schottky Diodes Terminated with P-Nio Field Limiting Rings

2.41 Kv Vertical P-Nio/n-ga2o3 Heterojunction Diodes with a Record Baligas Figure-of-Merit of 5.18 GW/cm2

A self-aligned Ga2O3 heterojunction barrier Schottky power diode

1.37 kV/12 A NiO/-Ga<sub>2</sub>O<sub>3</sub> Heterojunction Diode With Nanosecond Reverse Recovery and Rugged Surge-Current Capability

1.95-Kv Beveled-Mesa NiO/β-Ga2O3 Heterojunction Diode with 98.5% Conversion Efficiency and over Million-Times Overvoltage Ruggedness

Vertical GaN Schottky Barrier Diode with Hybrid PNiO Junction Termination Extension

Recent advances in NiO/Ga2O3 heterojunctions for power electronics

1.2 Kv/2.9 M Omega.Cm(2) Vertical Nio/Beta-Ga2o3 Heterojunction Diodes With High Switching Performance

Nio/Β-Ga2o3 Heterojunction Diodes with Ultra-Low Leakage Current below 10-10 a and High Thermostability

1.2kV/2.9mΩ.cm2 Vertical NiO/β-Ga2 O3 Heterojunction Diodes with High Switching Performance

2.6 Kv NiO/Ga2O3 Heterojunction Diode with Superior High-Temperature Voltage Blocking Capability

NiOx/\b{eta}-Ga2O3 Heterojunction Diode Achieving Breakdown Voltage >3 kV with Plasma Etch Field-Termination

>3kV NiO/Ga2O3 Heterojunction Diodes with Space-Modulated Junction Termination Extension and Sub-1V Turn-on

Improvement of Ga 2 O 3 vertical Schottky barrier diode by constructing NiO/Ga 2 O 3 heterojunction

SnO/$β$-Ga2O3 vertical $pn$ heterojunction diodes

Over 1.8 GW/cm(2) beveled-mesa NiO/beta-Ga2O3 heterojunction diode with 800 V/10 A nanosecond switching capability