Nio/Β-Ga2o3 Heterojunction Diodes with Ultra-Low Leakage Current below 10-10 a and High Thermostability

Yi Huang,Wen Yang,Qi Wang,Sheng Gao,Wei-Zhong Chen,Xiao-Sheng Tang,Hong-Sheng Zhang,Bin Liu

DOI: https://doi.org/10.1088/1674-1056/aca4be

2022-01-01

Chinese Physics B

Abstract:The 10 nm p-NiO thin film is prepared by thermal oxidation of Ni on β-Ga2O3 to form NiO/β-Ga2O3 p–n heterojunction diodes (HJDs). The NiO/β-Ga2O3 HJDs exhibit excellent electrostatic properties, with a high breakdown voltage of 465 V, a specific on-resistance (R on,sp) of 3.39 mΩ⋅cm2, and a turn-on voltage (V on) of 1.85 V, yielding a static Baliga's figure of merit (FOM) of 256 MW/cm2. Also, the HJDs have a low turn-on voltage, which reduces conduction loss dramatically, and a rectification ratio of up to 108. Meanwhile, the HJDs' reverse leakage current is essentially unaffected at temperatures below 170 °C, and their leakage level may be controlled below 10−10 A. This indicates that p-NiO/β-Ga2O3 HJDs with good thermal stability and high-temperature operating ability can be a good option for high-performance β-Ga2O3 power devices.