Abstract:As a promising third-generation semiconductor, gallium oxide (Ga2O3) is currently facing bottleneck for its p-type doping. The doping process of conventional semiconductors usually introduces trace impurities, which is a major technical problem in the electronics industry. In this article, we conceived that the process complexity could be significantly alleviated, and a high degree of control over the results could be attained using the selective enrichment of liquid metal interfaces and harvesting the doped metal oxide semiconductor layers. An appropriate mechanism is thus proposed to prepare the doped semiconducting based on multicomponent liquid metal alloys. Liquid metal alloys with the certain Cu weight ratios in bulk are utilized to harvest Cu-doped Ga2O3 films, which result in p-type conductivity. Then, field-effect transistors were integrated using the printed p and n-type Ga2O3 films and demonstrated to own excellent electrical properties and stability. Au electrodes fabricated on the printed Ga2O3 and Cu-doped Ga2O3 layers showed good Ohmic behavior. Furthermore, high-power diodes are realized using printed p and n-type Ga2O3 homojunction through combining van der Waals stacking with transfer printing. The fabricated Ga2O3 homojunction diode exhibited good efficiency at room temperature, involving a rectification ratio of 103 and forward current density at 10 V (J@10 V) of 1.3 mA. This opens the opportunity for the cost-effective creation of semiconductor films with controlled metal dopants. The process disclosed here suggests important strategies for further synthesis and manufacturing routes in electronics industries.

Fabrication on n-Ga<sub>2</sub>O<sub>3</sub>/p-GaN diode by wet-etching lift-off and transfer-print

Demonstration of N-Ga2o3/p-gan Diodes by Wet-Etching Lift-Off and Transfer-Print Technique

A P-Si/n-gan Diode Fabricated by Nanomembrane Lift-off and Transfer-Print Technique

Monocrystalline Si/$β$-Ga$_2$O$_3$ p-n heterojunction diodes fabricated via grafting

Demonstration of a monocrystalline GaAs-$β$-Ga$_2$O$_3$ p-n heterojunction

Fabrication of Ga2O3 Schottky Barrier Diode and Heterojunction Diode by MOCVD

Characteristics of grafted monocrystalline Si/ β -Ga2O3 p – n heterojunction

Initial demonstration of AlGaAs-GaAsP-beta-Ga2O3 n-p-n double heterojunctions

A Novel PN junction between Mechanically Exfoliated \b{eta}-Ga2O3 and p-GaN

Full β-Ga2O3 films-based p-n homojunction

Fabrication and emission properties of a n-ZnO/p-GaN heterojunction light-emitting diode

Performance Recovery of p‐GaN Etch‐Induced Degradation via Atomic Layer Deposition In Situ N2 Plasma and Postanneal‐Assisted Passivation

Liquid Metal Gallium-Based Printing of Cu-doped P-Type Ga2O3 Semiconductor and Ga2O3 Homojunction Diodes

Excellent wet etching technique using pulsed anodic oxidation for homoepitaxially grown GaN layer

Enhanced ultraviolet electroluminescence performance from p-NiO/n-GaN heterojunctions by using i-Ga2O3 as electron blocking layer

High-quality crystalline NiO/β-Ga2O3 p–n heterojunctions grown by the low-cost and vacuum-free mist-CVD for device applications

Fully Vertical GaN-on-SiC p-i-n Diodes With BFOM of 2.89 GW/cm2

Enhanced Light Emission of GaN-based Diodes with a NiOx/graphene Hybrid Electrode

Fabrication of GaN-based MEMS Structures Using Dry-Etch Technique

Demonstration of the P-Niox/n-ga2o3 Heterojunction Gate FETs and Diodes with BV2/Ron,sp Figures of Merit of 0.39 GW/cm2 and 1.38 GW/cm2

Over 1.8 GW/cm(2) beveled-mesa NiO/beta-Ga2O3 heterojunction diode with 800 V/10 A nanosecond switching capability