Abstract:Selective-area p-type doping has been regarded as one of the primary challenges in vertical GaN junction-based power devices. Nickel oxide (NiO), serving as a natural p-type semiconductor without the requirement for sophisticated activation and enabling adjustable charge concentration, is potentially feasible to form pn hetero-junction in GaN power devices. In this work, a vertical GaN Schottky barrier diode (SBD) featuring hybrid p-NiO junction termination extension (HP-JTE) with fluorine (F)-implanted buried layer (FIBL) has been demonstrated. With FIBL incorporated underneath p-NiO in the termination region, the reverse leakage current can be effectively reduced by approximately 3 orders of magnitude. By virtue of photon emission microscopy measurements, it has also been verified that the light emission and leakage current through p-NiO termination region can be effectively suppressed by FIBL. Thanks to the HP-JTE structure as well as the nearly ideal Schottky interface, the vertical GaN SBD exhibits a high current swing of similar to 10(13), a low ideality factor of similar to 1.02, a low differential R-ON of similar to 0.89 m ohm center dot cm(2), a low forward voltage drop of similar to 0.8 V(defined at 100 A/cm(2)), and a breakdown voltage of similar to 780 V(defined at 0.1 A/cm(2)). The characterizations and findings in this work can provide valuable insights into the p-NiO/GaN hetero-junction-based power devices.

Demonstration and Modeling of Unipolar-Carrier-conduction GaN Schottky-pn Junction Diode with Low Turn-on Voltage

First Demonstration of Vertical Superjunction Diode in GaN

Demonstration of nonpolar m-plane vertical GaN-on-GaN p-n power diodes grown on free-standing GaN substrates

Low Leakage Schottky Rectifiers Fabricated on Homoepitaxial Gan

High-Voltage Quasi-Vertical GaN Junction Barrier Schottky Diode with Fast Switching Characteristics

Schottky Rectifiers Fabricated on Bulk Gan Substrate Analyzed by Electron-Beam Induced Current Technique

Comparative Study on Schottky Contact Behaviors between Ga- and N-Polar GaN with SiNx Interlayer

Demonstration of a 2 Kv Al 0.85 Ga 0.15 N Schottky Barrier Diode with Improved On-Current and Ideality Factor

Vertical GaN Schottky Barrier Diode with Hybrid PNiO Junction Termination Extension

Design of GaN/AlGaN/GaN Super-Heterojunction Schottky Diode

Demonstration of Thin-Film GaN Schottky Diodes Fabricated with Epitaxial Lift-off

Comprehensive Design and Numerical Study of GaN Vertical MPS Diodes Towards Alleviated Electric Field Crowding and Efficient Carrier Injection

Demonstration of Vertical GaN Schottky Barrier Diode with Robust Electrothermal Ruggedness and Fast Switching Capability by Eutectic Bonding and Laser Lift-Off Techniques

Numerical Study of Novel GaN HEMTs With Integrated SBDs for Ultrahigh Reverse Conduction Capability

High Performance Quasi-Vertical GaN Junction Barrier Schottky Diode with Zero Reverse Recovery and Rugged Avalanche Capability

Fully-Vertical GaN-on-SiC Schottky Barrier Diode: Role of Conductive Buffer Structure

Dielectric Ruduced Surface Field Effect on Vertical GaN-on-GaN Nanowire Schottky Barrier Diodes

Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate with 1010 High On/Off Current Ratio and Low Specific On-Resistance

Demonstration of N-Ga2o3/p-gan Diodes by Wet-Etching Lift-Off and Transfer-Print Technique

Demonstration of Al0.85Ga0.15N Schottky Barrier Diode with > 3 Kv Breakdown Voltage and the Reverse Leakage Currents Formation Mechanism Analysis

High-Performance GaN Vertical Schottky Barrier Diode with Self-Alignment Trench Structure