Abstract:Carbon-doped GaN (GaN:C) Schottky diodes are prepared by controlling the destruction status of the graphene interlayer (GI) on the substrate. The GI without a sputtered AlN capping layer (CL) was destroyed because of ammonia precursor etching behavior in a high-temperature epitaxy. The damaged GI, like nanographite as a solid-state carbon doping source, incorporated the epitaxial growth of the GaN layer. The secondary ion mass spectroscopy depth profile indicated that the carbon content in the GaN layer can be tuned further by optimizing the sputtering temperature of AlN CL because of the better capping ability of high crystalline quality AlN CL on GI being achieved at higher temperature. The edge-type threading dislocation density and carbon concentration of the GaN:C layer with an embedded 550 °C-grown AlN CL on a GI substrate can be significantly reduced to 2.28 × 109 cm-2 and ∼2.88 × 1018 cm-3, respectively. Thus, a Ni-based Schottky diode with an ideality factor of 1.5 and a barrier height of 0.72 eV was realized on GaN:C. The series resistance increased from 28 kΩ at 303 K to 113 kΩ at 473 K, while the positive temperature coefficient (PTC) of series resistance was ascribed to the carbon doping that induced the compensation effect and lattice scattering effect. The decrease of the donor concentration was confirmed by temperature-dependent capacitance-voltage (C-V-T) measurement. The PTC characteristic of GaN:C Schottky diodes created by dissociating the GI as a carbon doping source should allow for the future use of high-voltage Schottky diodes in parallel, especially in high-temperature environments.

Demonstration of AlGaN-on-AlN p-n Diodes With Dopant-Free Distributed Polarization Doping

Ultrawide bandgap semiconductor heterojunction p-n diodes with distributed polarization doped p-type AlGaN layers on bulk AlN substrates

Ultrawide bandgap semiconductor heterojunction p–n diodes with distributed polarization-doped p-type AlGaN layers on bulk AlN substrates

Distributed polarization-doped GaN p–n diodes with near-unity ideality factor and avalanche breakdown voltage of 1.25 kV

Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping

Demonstration of nonpolar m-plane vertical GaN-on-GaN p-n power diodes grown on free-standing GaN substrates

Substantial P‐Type Conductivity of AlN Achieved via Beryllium Doping

Si/AlN p-n heterojunction interfaced with ultrathin SiO 2

Progress on N‐type Doping of AlGaN Alloys on AlN Single Crystal Substrates for UV Optoelectronic Applications

Si/AlN p-n heterojunction interfaced with ultrathin SiO2

Monolayer-scale AlN/GaN Digital Alloys Grown by Plasma-Assisted Molecular Beam Epitaxy

P-Doping-Free Iii-Nitride High Electron Mobility Light-Emitting Diodes and Transistors

High-resistivity Nitrogen-Polar GaN for GaN/AlGaN High Electron Mobility Transistors by Metalorganic Chemical Vapor Deposition

Ni/Au Schottky Diodes on Alxga1-Xn (0.7 < X < 1) Grown on Aln Single Crystal Substrates

Normally-off AlN/β-Ga2O3 Field-Effect Transistors Using Polarization-Induced Doping

Demonstration of Al0.85Ga0.15N Schottky Barrier Diode with > 3 Kv Breakdown Voltage and the Reverse Leakage Currents Formation Mechanism Analysis

Lateral p-type GaN Schottky barrier diode with annealed Mg ohmic contact layer demonstrating ideal current–voltage characteristic

GaN heterostructure barrier diodes (HBD) with polarization-induced delta-doping

Polarization Induced High Al Composition AlGaN P–n Junction Grown on Silicon Substrates

Solid-State Carbon-Doped GaN Schottky Diodes by Controlling Dissociation of the Graphene Interlayer with a Sputtered AlN Capping Layer

Doping and compensation in heavily Mg doped Al-rich AlGaN films