Design of GaN/AlGaN/GaN Super-Heterojunction Schottky Diode

Sang-Woo Han,Jianan Song,Rongming Chu
DOI: https://doi.org/10.1109/ted.2019.2953843
IF: 3.1
2020-01-01
IEEE Transactions on Electron Devices
Abstract:We present a systematic study on the design of a novel GaN/AlGaN/GaN super-heterojunction Schottky diode. Through physics-based TCAD simulation, we discuss three important design aspects: 1) how to design a GaN/AlGaN/GaN structure to form a high-density 2-D electron gas and to scale it to multiple vertically stacked channels with less risk in reaching the critical thickness limited by the strain in epitaxy; 2) how to reach charge balance and how sensitive is the breakdown voltage with respect to the doping imbalance; and 3) how to ensure that the processes of depleting and accumulating electrons and holes in the structure are fast enough for practical power switching applications.
engineering, electrical & electronic,physics, applied
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