Abstract:AlGaN/GaN heterojunction epitaxies with wide bandgap, high critical electric field as well as high density and high mobility two-dimensional electron gas have shown great potential in the application of next-generation high-power and high-frequency devices. Especially, with the development of Si-based GaN epitaxial technique with big size, GaN devices with low cost also show great advantage in consumer electronics. In order to improve the rectification efficiency of AlGaN/GaN Schottky barrier diodes, low leakage current and low turn-on voltage are important. GaN Schottky barrier diodes with low work-function metal as anode are found to be an effective method to decrease turn-on voltage. However, the low Schottky barrier height makes the Schottky interface sensitive to damages of groove surface, which leads to a high leakage current. In this paper, a novel wet-etching technique with thermal oxygen oxidation and KOH corrosion is used to prepare the anode groove, and the surface roughness of groove decreases from 0.57 to 0.23 nm, compared to the dry-etching surface of groove. Meanwhile, the leakage current is suppressed from 1.5×10 -6 to 2.6×10 -7 A/mm. Benefiting from the great corrosion selectively of hot KOH solution to AlGaN barrier layer and GaN channel layer after thermal oxygen oxidation, the spikes of the edge of groove region caused by the nonuniform distribution of plasma in the cavity, and the breakdown voltage of the fabricated AlGaN/GaN SBDs is improved from -1.28 to -1.73 kV.

Low Leakage Schottky Rectifiers Fabricated on Homoepitaxial Gan

Schottky Rectifiers Fabricated on Bulk Gan Substrate Analyzed by Electron-Beam Induced Current Technique

Reverse Leakage Mechanism of Schottky Barrier Diode Fabricated on Homoepitaxial Gan

Ultralow Reverse Leakage Current in AlGaN/GaN Lateral Schottky Barrier Diodes Grown on Bulk GaN Substrate

High-Resistivity Gan Homoepitaxial Layer Studied by Schottky Diode Structure

Design and Fabrication of Low-Leakage Vertical GaN TMBS Rectifier with Low Forward Voltage Drop

High-Voltage Quasi-Vertical GaN Junction Barrier Schottky Diode with Fast Switching Characteristics

Leakage Current in GaN-on-GaN Vertical GaN SBDs Grown by HVPE on Native GaN Substrates

An Ultralow Turn-On GaN Lateral Field-Effect Rectifier With Schottky-MIS Cascode Anode

GaN Lateral Schottky Diodes with High Baliga's Figure-of-Merit Utilizing Self-Terminated, Low Damage Anode Recessing Technology.

Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate With 10<SUP>10</SUP> High On/Off Current Ratio and Low Specific On-Resistance

High-Performance Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate with a Low Dislocation Density Drift Layer

Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate with 1010 High On/Off Current Ratio and Low Specific On-Resistance

Demonstration of Vertical GaN Schottky Barrier Diode with Robust Electrothermal Ruggedness and Fast Switching Capability by Eutectic Bonding and Laser Lift-Off Techniques

Study of Leakage Current Transport Mechanisms in Pseudo-Vertical GaN-on-Silicon Schottky Diode Grown by Localized Epitaxy

Low leakage current and high breakdown voltage of AlGaN/GaN Schottky barrier diodes with wet-etching groove anode

Demonstration and Modeling of Unipolar-Carrier-conduction GaN Schottky-pn Junction Diode with Low Turn-on Voltage

Establishment of Composite Leakage Model and Design of GaN Schottky Barrier Diode with Stepped Field Plate

Vertical GaN power rectifiers: interface effects and switching performance

Vertical GaN Schottky Barrier Diode with Hybrid PNiO Junction Termination Extension

High-performance AlGaN∕GaN Lateral Field-Effect Rectifiers Compatible with High Electron Mobility Transistors