Abstract:Large‐scale MoTe2 n‐type field‐effect transistor (FET) arrays with coplanar metallic 1T′‐WTe2 contacts are successfully fabricated, showing typical n‐type characteristics. Furthermore, large‐scale homogeneous complementary metal‐oxide‐semiconductor (CMOS) inverter arrays are fabricated, showing clear logic swing with low power consumption and high device yield (≈92%). The fabrication method is free from the transfer process and both the n‐FETs and CMOS inverters show high uniformity and reliability. 2D MoTe2 is regarded as a favorable candidate for semiconductor nanoelectronics integration. Chemical‐vapor‐deposition‐grown MoTe2 usually presents p‐type characteristics. In order to realize basic electronic units like complementary metal‐oxide‐semiconductor (CMOS) inverter, controllable fabrication of p‐ and n‐type transistors at large scale is of vital importance. Here, large‐scale MoTe2 n‐channel field‐effect transistor (n‐FET) arrays are successfully fabricated with seamless coplanar metallic 1T′‐WTe2 contacts to reduce contact resistance. High‐k HfO2 serves as a gate dielectric and its atomic‐layer‐deposition (ALD) process causes an n‐doping effect on the 2H‐MoTe2 channel. The FETs perform typical n‐type characteristics with average electron density and on/off ratio of ≈1.7 × 1013 cm−2 and 2.1 × 104, respectively. Furthermore, large‐scale homogeneous CMOS inverter arrays are fabricated, showing clear logic swing with low power consumption (≈0.4 nW) and high device yield (≈92%). Notably, their voltage transfer characteristics exhibit small hysteresis, and they work well after being kept in air for 16 months, indicating high device stability. The statistical results show that both the n‐FETs and CMOS inverters have high uniformity and reliability in performance. Significantly, this fabrication method is free from transfer processes and compatible with traditional silicon technology. This work paves the way for the application of few‐layer MoTe2 in semiconductor nanoelectronics integration.

Wafer-Scale Atomic Layer-Deposited TeO x /Te Heterostructure P-Type Thin-Film Transistors

Wafer-scale Te Thin Film with High Hole Mobility and Piezoelectric Coefficients

Physical Vapor Deposition of High Mobility P-type Tellurium and its Applications for Gate-tunable van der Waals PN Photodiodes

Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility

High-Performance and Low-Power Transistors Based on Anisotropic Monolayer Β - TeO2

Ultralow Voltage Operation of p- and n-FETs Enabled by Self-Formed Gate Dielectric and Metal Contacts on 2D Tellurium

Realization of Fermi level unpinning and high-quality p-type contacts for 2D β-TeO 2 by a built-in intercalation

Bilayer TeO2: The First Oxide Semiconductor with Symmetric Sub-5-nm NMOS and PMOS

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Precursor-Confined Chemical Vapor Deposition of 2D Single-Crystalline SexTe1- x Nanosheets for p-Type Transistors and Inverters

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Strain modulation effects on Two-Dimensional tellurium for advanced p-Type transistor applications

High‐Performance Large‐Scale Vertical 1T'/2H Homojunction CVD‐Grown Polycrystalline MoTe 2 Transistors

Fabrication of p-type 2D single-crystalline transistor arrays with Fermi-level-tuned van der Waals semimetal electrodes

High‐Performance Large‐Scale Vertical 1T'/2H Homojunction CVD‐Grown Polycrystalline MoTe2 Transistors

Chemical Synthesis and Integration of Highly Conductive PdTe 2 with Low‐Dimensional Semiconductors for p‐Type Transistors with Low Contact Barriers

Chemical Synthesis and Integration of Highly Conductive PdTe2 with Low‐Dimensional Semiconductors for P‐type Transistors with Low Contact Barriers

Amorphous TeO2 as p-type oxide semiconductor for device applications

Large‐Scale N‐Type FET and Homogeneous CMOS Inverter Array Based on Few‐Layer MoTe2

Processes to enable hysteresis-free operation of ultrathin ALD Te p-channel field-effect transistors

Selenium alloyed tellurium oxide for amorphous p-channel transistors