Abstract:High‐quality Bi2O2Te nanosheets and continuous films are grown using low‐pressure chemical vapor deposition method. The construction of top single‐crystalline native oxide Bi2TeO6 and bottom high‐mobility Bi2O2Te heterostructure is demonstrated via O intercalative oxidation at elevated temperatures in air, with an atomically sharp and low‐stress interface, indicating the potential of Bi2O2Te with native oxide in planar integrated functional nanoelectronics. Following logic in the silicon semiconductor industry, the existence of native oxide and suitable fabrication technology is essential for 2D semiconductors in planar integronics, which are surface‐sensitive to typical coating technologies. To date, very few types of integronics are found to possess this feature. Herein, the 2D Bi2O2Te developed recently is reported to possess large‐area synthesis and controllable thermal oxidation behavior toward single‐crystal native oxides. This shows that surface‐adsorbed oxygen atoms are inclined to penetrate across [Bi2O2]n2n+ layers and bond with the underlying [Te]n2n− at elevated temperatures, transforming directly into [TeO4]n2n− with the basic architecture remaining stable. The oxide can be adjusted to form in an accurate layer‐by‐layer manner with a low‐stress sharp interface. The native oxide Bi2TeO6 layer (bandgap of ≈2.9 eV) exhibits visible‐light transparency and is compatible with wet‐chemical selective etching technology. These advances demonstrate the potential of Bi2O2Te in planar‐integrated functional nanoelectronics such as tunnel junction devices, field‐effect transistors, and memristors.

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