Abstract:Ultra-wide band gap gallium oxide (Ga2O3) semiconductor has important research value and broad potential applications in power and radio frequency (RF) electronic devices, due to its large bandgap, high critical breakdown field strength, and large size single crystal substrate. Although great progress has been obtained in its materials and devices, such as the commercial 2-inch and 4-inch single crystal and epitaxial substrates, the extremely low thermal conductivity and the lack of effective p-type doping techniques are the crucial bottlenecks limiting the complex device structures and improved performance. The recent progress of heterogeneous Ga2O3 transistors on high thermal conductivity substrates and superjunction transistors based on p-NiO/ n-Ga2O3 heterojunctions are reviewed. The thermal limitation of Ga2O3 electronics can be effectively overcome by the heterogeneous integration of beta-Ga2O3 electronics onto the high. substrates, such as Si, SiC, and so on. Transient thermoreflectance measurements present an effectively improved thermal boundary resistance of the fabricated beta-Ga2O3/SiC heterostructure by the ion-cutting process compared with that of the beta-Ga2O3 bulk wafer. Heterogeneous Ga2O3 transistors on SiC and Si substrates exhibited superior temperature-dependent performance to the devices on the Ga2O3 bulk substrate. As the ambient temperature increases from 25 to 250 degrees C, heterogeneous beta-Ga2O3 metal-oxide-semiconductor field effect transistors (MOSFETs) on Si substrates have a more stable ION as compared to the devices on a semi-insulating beta-Ga2O3 substrate and IOFF of the devices increases by one order of magnitude in the same ambient temperature range due to the eliminated substrate leakage, which is superior to the bulk devices (5-6 orders of magnitude). Heterogeneous beta-Ga2O3 MOSFETs on SiC substrates exhibit a more satisfactory onresistance with an elevated temperature than that of the Ga2O3 Schottky barrier diodes and MOSFETs on the bulk wafers. The recessed-gate Ga2O3-on-SiC MOSFETs demonstrate a stable power figure of merit of 100 MW/cm(2) up to 200 degrees C with a nearly kV-class breakdown voltage. The heterogeneous epitaxial p-NiO film on Ga2O3 substrates is developed to solve the lack of p-type doping techniques of Ga2O3. p-NiO/n-Ga2O3 heterojunctions show high quality and famous performance of p-n junctions through the fabricated heterojunction diodes, which provide a feasible way for the development of Ga2O3 bipolar devices. Superjunction transistors based on p-NiO/n- Ga2O3 heterojunctions present decent electrical characteristics, demonstrating a breakdown voltage and power figure-of merit of 2.42 and 4.86 times higher, respectively, than those of the control devices. Heterogeneous integration and heterojunction techniques of Ga2O3 can effectively overcome the two crucial bottlenecks to realize high-efficiency, high-power, commercially scalable Ga2O3 microelectronic devices and promote its practical process.

Potential of the Amorphous Oxide Semiconductors for Heterogeneous Power Integration Applications

Low-Temperature Fabricated Amorphous Oxide Semiconductor Heterojunction Diode for Monolithic 3D Power Integration Applications

Surface Amorphous Oxides Induced Electron Transfer into Complex Oxide Heterointerfaces

New Class of Amorphous Oxide Semiconductors from Amorphous Alloys

Reliability issues of amorphous oxide semiconductor-based thin film transistors

First-Principles-Based Quantum Transport Simulations of High- Performance and Low-Power MOSFETs Based on Monolayer Ga2O3

Synergistically Enhanced Performance and Reliability of Abrupt Metal‐Oxide Heterojunction Transistor

Comprehensive Review on Amorphous Oxide Semiconductor Thin Film Transistor

Homojunction Structure Amorphous Oxide Thin Film Transistors with Ultra-High Mobility

Gallium Oxide (ga2o3) Heterogeneous and Heterojunction Power Devices

Exploring Two-Dimensional Transport Phenomena in Metal Oxide Heterointerfaces for Next-Generation, High-Performance, Thin-Film Transistor Technologies

Progress, Challenges, and Opportunities in Oxide Semiconductor Devices: A Key Building Block for Applications Ranging from Display Backplanes to 3D Integrated Semiconductor Chips

Amorphous oxide semiconductors: From fundamental properties to practical applications

Thermal Stability of the Avalanche-Like Breakdown Performance in Conjugated Polymer-Based Lateral Power Devices

Complex Amorphous Oxides: Property Prediction from High Throughput DFT And AI For New Material Search

Progress of gallium oxide heterogeneous and heterojunction power transistors

Boosting the performance and durability of heterogeneous electrodes for solid oxide electrochemical cells utilizing a data-driven powder-to-power framework

Amorphous TeO2 as p-type oxide semiconductor for device applications

Addressing the Conflict between Mobility and Stability in Oxide Thin‐film Transistors

Ternary Wide Band Gap Oxides for High-Power Electronics Identified Computationally

Numerical Study of Metal Oxide Heterojunction Solar Cells