Abstract:Due to its high critical breakdown electrical field and the availability of large-scale single crystal substrates, Gallium oxide (Ga2O3) holds great promise for power electronic and radio frequency (RF) applications. While significant advancements have been made in Ga2O3 material and device research, there are still challenges related to its ultra-low thermal conductivity and the lack of effective p-type doping methods. These limitations hinder the fabrication of complex device structures and the enhancement of device performance. This review aims to provide an introduction to the research development of Ga2O3 heterogeneous and heterojunction power devices based on heterogeneous integration technology. By utilizing ion-cutting and wafer bonding techniques, heterogeneous substrates with high thermal conductivity have been realized, offering a viable solution to overcome the thermal limitations of Ga2O3. Compared to Ga2O3 bulk devices, Ga2O3 devices fabricated on heterogeneous substrates integrated with SiC or Si exhibit superior thermal properties. Power diodes and superjunction transistors based on p-NiO/n-Ga2O3 heterojunctions on heterogeneous substrates have demonstrated outstanding electrical characteristics, presenting a feasible method for the development of bipolar devices. The technologies of heterogeneous integration and heterojunction address critical issues related to Ga2O3, thereby advancing the commercial applications of Ga2O3 devices in power and RF fields. By integrating Ga2O3 with other materials and leveraging heterojunction interfaces, researchers and engineers have made significant progress in improving device performance and overcoming limitations. These advancements pave the way for the wider adoption of Ga2O3-based devices in various power and RF applications.

Low-Temperature Fabricated Amorphous Oxide Semiconductor Heterojunction Diode for Monolithic 3D Power Integration Applications

Potential of the Amorphous Oxide Semiconductors for Heterogeneous Power Integration Applications

Low-Temperature-Processed Power Schottky Diode Based on Amorphous Indium-Tin-Zinc-Oxide/Indium-Gallium-Zinc-Oxide Bilayer

All Amorphous Oxide Bipolar Heterojunction Diodes from Abundant Metals

Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices

Low-Temperature (≤500 °C) Complementary Schottky Source/Drain FinFETs for 3D Sequential Integration

Nio/Β-Ga2o3 Heterojunction Diodes with Ultra-Low Leakage Current below 10-10 a and High Thermostability

Gallium Oxide Heterojunction Diodes for Improved High-Temperature Performance

High- κ monocrystalline dielectrics for low-power two-dimensional electronics

Monolithic 3D integration of back-end compatible 2D material FET on Si FinFET

Monolithic three-dimensional tier-by-tier integration via van der Waals lamination

Integrating high-quality dielectrics with one-nanometer equivalent oxide thickness on two-dimensional electronic devices

Field-Plated NiO/Ga2O3 P-N Heterojunction Power Diodes with High-Temperature Thermal Stability and Near Unity Ideality Factors

Liquid Metal Gallium-Based Printing of Cu-doped P-Type Ga2O3 Semiconductor and Ga2O3 Homojunction Diodes

Large-area, low-voltage, anti-ambipolar heterojunctions from solution-processed semiconductors

High-Performance Heterojunctions Based On 2d Semiconductors

Fabrication and Analysis of a Novel High Voltage Heterojunction p-NiO/n-Ga<sub>2</sub>O<sub>3</sub> Diode

Gallium Oxide (ga2o3) Heterogeneous and Heterojunction Power Devices

High-Performance Oxide-Based p-n Heterojunctions Integrating p-SnO x and n-InGaZnO

High-Performance CMOS Inverter Array with Monolithic 3D Architecture Based on CVD-Grown N-Mos2 and P-Mote2.

Monolithic 3D Integration of Vertically Stacked CMOS Devices and Circuits with High-Mobility Atomic-Layer-Deposited In2O3 N-Fet and Polycrystalline Si P-Fet: Achieving Large Noise Margin and High Voltage Gain of 134 V/V