Abstract:2D van der Waals (vdW) p‐n junctions based on vertically stacked atomically thin semiconductor materials have shown tremendous potential in high‐performance integrated electronics and optoelectronics. However, unlike traditional semiconductors, the conventional doping methods to achieve p‐type and n‐type doping in 2D semiconductors remain a large challenge due to their ultrathin structures with limited physical space. Here, by means of density functional theory computations, a nonvolatile doping strategy to obtain self‐defined p‐n junctions in 2D vdW heterostructures created by assembling monolayer transition metal dichalcogenides (TMDs) on polar semiconductors (PSs) is reported. The calculated results show that the quantum‐confined Stark effect causes the band inclination of 2D PSs along the polarization direction, which allows to manipulate the type of band alignment and spatial distribution of carriers in the heterostructures via the polarization modulation. In particular, the realization of nonvolatile p‐n junctions in type‐III TMD/PS heterostructures with ultrahigh carrier concentration (≈1013 ‐ 1014 cm‐2) is demonstrated, and the spatial distribution of charge carriers in the heterostructures can be tuned by the polarization switching. This work provides a nondestructive doping strategy to obtain programmable vdW p‐n junctions with high carrier concentration and band‐engineering approach for the development of versatile 2D electronics and optoelectronics. A nondestructive doping strategy is demonstrated by the integration of atomically thin transition metal dichalcogenides on 2D polar semiconductors (PSs) into van der Waals heterostructures. The band inclination of 2D PSs induced by the quantum‐confined Stark effect allows to manipulate the band alignment and spatial distribution of carriers in the heterostructures via the polarization switching.

Large-area, low-voltage, anti-ambipolar heterojunctions from solution-processed semiconductors

A van der Waals pn heterojunction with organic/inorganic semiconductors

High-Performance Heterojunctions Based On 2d Semiconductors

Highly Tunable Lateral Homojunction Formed in Two-Dimensional Layered CuInP2S6 via In- Plane Ionic Migration

Carbon-Nanotube-Confined Vertical Heterostructures with Asymmetric Contacts

Atomically Thin P–n Junctions with Van Der Waals Heterointerfaces

Realization of Vertical and Lateral Van Der Waals Heterojunctions Using Two-Dimensional Layered Organic Semiconductors

Wafer scale synthesis of organic semiconductor nanosheets for van der Waals heterojunction devices

Hybrid Heterostructures And Devices Based On Two-Dimensional Layers And Wide Bandgap Materials

Vertically Stacked and Self-Encapsulated van der Waals Heterojunction Diodes Using Two-Dimensional Layered Semiconductors

Gate-Tunable Semiconductor Heterojunctions from 2D/3D van der Waals Interfaces

Spatially selective p-type doping for constructing lateral WS 2 p-n homojunction via low-energy nitrogen ion implantation

Polarization‐Induced Band‐Alignment Transition and Nonvolatile p‐n Junctions in 2D Van der Waals Heterostructures

Anti‐Ambipolar Heterojunctions: Materials, Devices, and Circuits

Robust Anti-Ambipolar Behavior and Gate-Tunable Rectifying Effect in van der Waals p–n Junctions

Heterogeneous Integration of Atomically Thin Semiconductors for Non-von Neumann CMOS

Novel P-N Junctions Based on Ambipolar Two-Dimensional Crystals

2D Homojunctions for Electronics and Optoelectronics

Lateral Heterojunctions Within Monolayer Semiconductors

Ultrafast-programmable two-dimensional p-n homojunction for high-performance photovoltaics and optoelectronics

Highly Tunable Lateral Homojunction Formed in Two-Dimensional Layered CuInP 2 S 6 via In-Plane Ionic Migration