Abstract:Layered semiconductors, represented by transition metal dichalcogenides, have attached extensive attention due to their unique and tunable electrical and optical properties. In particular, lateral layered semiconductor multijunctions, including homojunctions, heterojunctions, hybrid junctions and superlattices, present a totally new degree of freedom in research on electronic devices beyond traditional materials and their structures, providing unique opportunities for the development of new structures and operation principle-based high performance devices. However, the advances in this field are limited by the precise synthesis of high-quality junctions and greatly hampered by ambiguous device performance limits. Herein, we review the recent key breakthroughs in the design, synthesis, electronic structure and property modulation of lateral semiconductor multijunctions and focus on their application-specific devices. Specifically, the synthesis methods based on different principles, such as chemical and external source-induced methods, are introduced stepwise for the controllable fabrication of semiconductor multijunctions as the basics of device application. Subsequently, their structure and property modulation are discussed, including control of their electronic structure, exciton dynamics and optical properties before the fabrication of lateral layered semiconductor multijunction devices. Precise property control will potentially result in outstanding device performances, including high-quality diodes and FETs, scalable logic and analog circuits, highly efficient optoelectronic devices, and unique electrochemical devices. Lastly, we focus on several of the most essential but unresolved debates in this field, such as the true advantages of few-layer vs. monolayer multijunctions, how sharp the interface should be for specific functional devices, and the superiority of lateral multijunctions over vertical multijunctions, highlighting the next-phase strategy to enhance the performance potential of lateral multijunction devices.

Realization of Vertical and Lateral Van Der Waals Heterojunctions Using Two-Dimensional Layered Organic Semiconductors

A van der Waals pn heterojunction with organic/inorganic semiconductors

Tunable Two-Dimensional Interfacial Coupling in Molecular Heterostructures

Intercalation and hybrid heterostructure integration of two-dimensional atomic crystals with functional organic semiconductor molecules

Vertically Stacked and Self-Encapsulated van der Waals Heterojunction Diodes Using Two-Dimensional Layered Semiconductors

Edge-by-Edge Lateral Heterostructure through Interfacial Sliding

Hybrid van der Waals heterojunction based on two-dimensional materials

Wafer scale synthesis of organic semiconductor nanosheets for van der Waals heterojunction devices

When 2D Materials Meet Molecules: Opportunities and Challenges of Hybrid Organic/Inorganic van der Waals Heterostructures

Strong interlayer coupling and long-lived interlayer excitons in two-dimensional perovskite derivatives and transition metal dichalcogenides van der Waals heterostructures

A van der Waals heterojunction strategy to fabricate layer-by-layer single-molecule switch

Large-area, low-voltage, anti-ambipolar heterojunctions from solution-processed semiconductors

Fundamentals of lateral and vertical heterojunctions of atomically thin materials

Controllable Preparation of 2D Vertical van der Waals Heterostructures and Superlattices for Functional Applications

High-Performance Heterojunctions Based On 2d Semiconductors

Two-Dimensional Semiconductor Heterojunctions for Optoelectronics and Electronics

Customization of 2D Atomic‐Molecular Heterojunction with Manipulatable Charge‐Transfer and Band Structure

Organic Heterojunctions Formed By Interfacing Two Single Crystals From A Mixed Solution

Ultra-clean assembly of van der Waals heterostructures

Lateral layered semiconductor multijunctions for novel electronic devices

Vertical heterostructure of two-dimensional MoS₂ and WSe₂ with vertically aligned layers.