Abstract:Layered transition metal dichalcogenides (TMDs) and other two-dimensional (2D) materials are promising candidates for enhancing the capabilities of complementary metal-oxide-semiconductor (CMOS) technology. Field-effect transistors (FETs) made with 2D materials often exhibit mobilities below their theoretical limit, and strategies such as encapsulation with dielectrics grown by atomic layer deposition (ALD) have been explored to tune carrier concentration and improve mobility. While molecular adsorbates are known to dope 2D materials and influence charge scattering mechanisms, it is not well understood how ALD reactants affect 2D transistors during growth, motivating in situ or operando studies. Here, we report electrical characterization of MoS2 and MoTe2 FETs during ALD of MoOx. The field effect mobility improves significantly within the first five cycles of ALD growth using Mo(NMe2)4 as the metal-organic precursor and H2O as the oxidant. Analyses of the in situ transconductance at the growth temperature and ex situ variable temperature transconductance measurements indicate that the majority of the mobility enhancement observed at the beginning of dielectric growth is due to screening of charged impurity scattering by the adlayer. Control experiments show that exposure to only H2O or O2 induces more modest and reversible electronic changes in MoTe2 FETs, indicating that negligible oxidation of the TMD takes place during the ALD process. Due to the strong influence of the first <2 nm of deposition, when the dielectric adlayer may be discontinuous and still evolving in stoichiometry, this work highlights the need for further assessment of nucleation layers and initial deposition chemistry, which may be more important than the bulk composition of the oxide itself in optimizing performance and reproducibility.

Processes to enable hysteresis-free operation of ultrathin ALD Te p-channel field-effect transistors

Promotion of Processability in a p-Type Thin-Film Transistor Using a Se-Te Alloying Channel Layer

Strain modulation effects on Two-Dimensional tellurium for advanced p-Type transistor applications

Hysteresis Suppression of Carbon Nanotube Thin-Film Transistor Using Laminated HfO2/Al2O3 by ALD

Recessed-Channel WSe2 Field-Effect Transistor via Self-Terminated Doping and Layer-by-Layer Etching

Wafer-Scale Atomic Layer-Deposited TeO x /Te Heterostructure P-Type Thin-Film Transistors

Fabrication of p-type 2D single-crystalline transistor arrays with Fermi-level-tuned van der Waals semimetal electrodes

0.2- AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition Passivation

High performance bilayer MoTe2 transistors with co-sputtered ternary HfAlO2 high-k dielectric

Self-Aligned Edge Contact Process for Fabricating High-Performance Transition-Metal Dichalcogenide Field-Effect Transistors

Device performance limit of in-plane monolayer VTe2/WTe2 heterojunction-based field-effect transistors

Precision Interface Engineering of an Atomic Layer in Bulk Bi2Te3 Alloys for High Thermoelectric Performance

Improved Device Performance of MoTe2 Nanoribbon Transistors with Solution-processed Ternary HfAlOx High-k Dielectric

High-Performance and Low-Power Transistors Based on Anisotropic Monolayer Β - TeO2

In situ transport measurements reveal source of mobility enhancement of MoS2 and MoTe2 during dielectric deposition

High-performance and Low-power Transistors Based on Anisotropic Monolayer Β-Teo_2

Replacement metal-gate NMOSFETs with ALD TaN/EP-Cu, PVD Ta, and PVD TaN electrode

High‐Performance and Low‐Power Polycrystalline MoTe2 Thin Film Transistors with Solution‐Processed Ternary Oxide High‐k Dielectric

Ultralow Voltage Operation of p- and n-FETs Enabled by Self-Formed Gate Dielectric and Metal Contacts on 2D Tellurium

Review Article: Atomic layer deposition for oxide semiconductor thin film transistors: Advances in research and development