Abstract:In this work, the gate controllability of WSe2 channel with varying thickness from monolayer to ten‐layer is investigated, by fabricating van der Waals contacted WSe2 devices. The findings demonstrate negligible hysteresis and excellent subthreshold swing observed when utilizing WSe2 channel thicknesses ≥ five‐layer. However, by reducing the WSe2 channel thickness below the trilayer, the subthreshold swing deviates from the thermal limit. The pursuit of near‐ideal subthreshold swing (SS) ≈ 60 mV dec−1 is a primary driving force to realize the power‐efficient field‐effect transistors (FETs). This challenge is particularly pronounced in 2D material‐based FETs, where the presence of a large interface trap density (Dit) imposes limitations on electrostatic control, consequently escalating power consumption. In this study, the gate controllability of 2D FETs is systematically analyzed by fabricating pre‐patterned van der Waals (vdW)‐contacted p‐FETs, varying the WSe2 channel thickness from monolayer to ten‐layer. As a result, the channel thickness is optimized to achieve efficient gate controllability while minimizing Dit. The findings demonstrate negligible hysteresis and excellent subthreshold swing (SSmin) close to the thermal limit (≈60 mV dec−1), with a corresponding Dit of ≈1010 cm−2 eV−1, comparable to Dit values observed in state‐of‐the‐art Si transistors, when utilizing WSe2 channel thicknesses ≥ five‐layer. However, reducing the WSe2 channel thickness below the trilayer, SSmin (≈91 mV dec−1) deviates from the thermal limit, attributed to a comparatively higher Dit (≈1011 cm−2 eV−1), despite the still lower than values reported for surface‐contacted 2D transistors. Furthermore, all devices exhibit consistent p‐type characteristics, featuring a high ION/IOFF ratio, high mobility, and excellent electrical stability confirmed over several months.

Recessed-Channel WSe2 Field-Effect Transistor via Self-Terminated Doping and Layer-by-Layer Etching

Unipolar P-Type Monolayer WSe2 Field-Effect Transistors with High Current Density and Low Contact Resistance Enabled by Van Der Waals Contacts

Selective Electron Beam Patterning of Oxygen-Doped WSe2 for Seamless Lateral Junction Transistors

Low Resistance Ohmic Contact to P-type Monolayer WSe2

Achieving Near‐Ideal Subthreshold Swing in P‐Type WSe2 Field‐Effect Transistors

Low Resistance Contact to P-Type Monolayer WSe2

Atomically Controlled Tunable Doping in High Performance WSe2 Devices

High Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions

Self-Aligned Edge Contact Process for Fabricating High-Performance Transition-Metal Dichalcogenide Field-Effect Transistors

Ultimate Limit in Optoelectronic Performances of Monolayer WSe 2 Sloping-Channel Transistors

Pentacene Field-Effect Transistors with Sub-10-nm Channel Lengths

Ultrashort Channel Chemical Vapor Deposited Bilayer WS2 Field-Effect Transistors

High-Performance Contact-Doped WSe2 Transistors Using TaSe2 Electrodes.

A ferroelectric relaxor polymer-enhanced p-type WSe2 transistor

High-Performance p-Type Quasi-Ohmic of WSe2 Transistors Using Vanadium-Doped WSe2 as Intermediate Layer Contact

Quasi-Zero-Dimensional Source/Drain Contact for Fermi-Level Unpinning in a Tungsten Diselenide (WSe2) Transistor: Approaching Schottky-Mott Limit

Multi-Layer Palladium Diselenide as a Contact Material for Two-Dimensional Tungsten Diselenide Field-Effect Transistors

Se-Vacancy Healing with Substitutional Oxygen in WSe2 for High-Mobility p-Type Field-Effect Transistors

Low-defect-density WS 2 by Hydroxide Vapor Phase Deposition

Improvements in 2D p-type WSe2 transistors towards ultimate CMOS scaling

High-performance multilayer WSe2 p-type field effect transistors with Pd contacts for circuit applications