Abstract:High-performance ZnO thin-film transistors (TFTs) have been successfully fabricated by atomic layer deposition (ALD) with a maximum temperature of 200 °C. The impacts of deposition and annealing temperature on the characteristics of devices were discussed. ZnO thin films show a (002) preferred orientation at the high growth temperature. The carrier concentrations of ZnO TFTs can be optimized by appropriate growth temperature and annealing treatments. Subthreshold swing (SS) and hysteresis windows of TFTs are improved after annealing in dry O<sub>2</sub> due to the reduction in traps at ZnO/SiO<sub>2</sub> interface or/and within the ZnO channel. The ZnO TFT deposited at 150 °C with 200 °C annealing in oxygen demonstrates excellent electrical characteristics with high saturation mobility <inline-formula> <tex-math notation="LaTeX">$\mu _{\text {sat}}$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$7.8 {\mathrm {cm}}^{\text {2}}\text{V}^{-\text {1}}\text{s}^{-\text {1}}$ </tex-math></inline-formula>, small SS of 127 mV/decade, high <inline-formula> <tex-math notation="LaTeX">${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$2.8 \times 10^{\text {9}}$ </tex-math></inline-formula>, and good contact between source/drain electrodes. The high-performance ZnO TFTs with low processing temperatures have great potential in application for flexible electronics.

Titanium doped Zinc-oxide based Thin Film Transistors: Optimization of the source/drain materials

Titanium Doped Zinc Oxide Thin Film Transistors Fabricated by Cosputtering Technique

High Performance Ti-Doped ZnO TFTs with AZO/TZO Heterojunction S/D Contacts

Fabrication optimization to improve performance of gallium-doped zinc oxide thin film transistors

Sn-Doped Zno Thin-Film Transistors with Azo, Tzo and Al Heterojunction Source/Drain Contacts

Performance Enhancement of Fully Transparent Tin-Doped Zinc Oxide Thin-Film Transistors Fabricated by Sputtering at Low Temperature

Properties of Al-doped ZnO film transistors with different source and drain electrodes

Effect of Al Doping on Performance of ZnO Thin Film Transistors

High-Performance ZnO Thin-Film Transistors Prepared by Atomic Layer Deposition

Solution-Processed Zinc Oxilde Thin Films and Top-Gate Thin Film Transistors

Improving Performance of Tin-Doped-Zinc-Oxide Thin-Film Transistors by Optimizing Channel Structure

High-Performance Thin-Film Transistors with ZnO/Al2O3 Superlattice Channel Fabricated by Atomic Layer Deposition

Enhanced Performance of ZnO Thin-Film Transistors with ZnO Dual-Active-layer

Self-Aligned Top-Gate Amorphous Zinc-Tin Oxide Thin-Film Transistor with Source/Drain Regions Doped by Al Reaction

Effects of various oxygen partial pressures on Ti-doped ZnO thin film transistors fabricated on flexible plastic substrate

Effects of radio frequency power on properties of titanium-doped zinc oxide based TFTs

Full-solution-processed High Mobility Zinc-Tin-oxide Thin-Film-transistors

Enhancement of electrical properties of solution-processed oxide thin film transistors using ZrO<sub>2</sub> gate dielectrics deposited by an oxygen-doped solution

Performance improvement of tin-doped zinc oxide thin-film transistor by novel channel modulation layer of indium tin oxide/tin zinc oxide

Performance enhancement of ATZO TFTs by component control and post treatment

Improving Performance of Tin-Doped-Zinc-Oxide Thin-Film Transistors by Optimized Multi-Stacked Active-Layer Structures