Abstract:Amorphous indium-gallium-zinc oxide (a-IGZO) has become a standard channel ingredient of switching/driving transistors in active-matrix organic light-emitting diode (AMOLED) televisions. However, mobile AMOLED displays with a high pixel density (≥500 pixels per inch) and good form factor do not often employ a-IGZO transistors due to their modest mobility (10-20 cm2/(V s)). Hybrid low-temperature polycrystalline silicon and oxide transistor (LTPO) technology is being adapted in high-end mobile AMOLED devices due to its ultralow power consumption and excellent current drivability. The critical issues of LTPO (including a complicated structure and high fabrication costs) require a search for alternative all-oxide thin-film transistors (TFTs) with low-cost processability and simple device architecture. The atomic layer deposition (ALD) method is a promising route for high-performance all-oxide TFTs due to its unique features, such as in situ cation composition tailoring ability, precise nanoscale thickness controllability, and excellent step coverage. Here, we report an in-depth comparative investigation of TFTs with indium-gallium oxide (IGO)/gallium-zinc oxide (GZO) and indium-zinc oxide (IZO)/GZO heterojunction stacks using an ALD method. IGO and IZO layers with different compositions were tested as a confinement layer (CL), whereas the GZO layer was used as a barrier layer (BL). Optimal IGO/GZO and IZO/GZO channels were carefully designed on the basis of their energy band properties, where the formation of a quasi-two-dimensional electron gas (q2DEG) near the CL/BL interface is realized by rational design of the band gaps and work-functions of the IGO, IZO, and GZO thin films. To verify the effect of q2DEG formation, the device performances and stabilities of TFTs with CL/BL oxide heterojunction stacks were examined and compared to those of TFTs with a single CL layer. The optimized device with the In0.75Zn0.25O/Ga0.80Zn0.20O stack showed remarkable electrical performance: μFE of 76.7 ± 0.51 cm2/(V s), VTH of -0.37 ± 0.19 V, SS of 0.13 ± 0.01 V/dec, and ION/OFF of 2.5 × 1010 with low operation voltage range of ≥2 V and excellent stabilities (ΔVTH of +0.35, -0.67, and +0.08 V for PBTS, NBIS, and CCS, respectively). This study suggests the feasibility of using high-performance ALD-derived oxide TFTs (which can compete with the performance of LTPO transistors) for high-end mobile AMOLED displays.

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Atomic Layer Deposition of an Indium Gallium Oxide Thin Film for Thin-Film Transistor Applications

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Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors

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Ultrathin In2O3thin-film transistors deposited from trimethylindium and ozone

Comparative Study of Indium Oxide Films for High‐Mobility TFTs: ALD, PLD and Solution Process

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High-Performance Atomic-Layer-Deposited Indium Oxide 3-D Transistors and Integrated Circuits for Monolithic 3-D Integration

Atomic-Layer-Deposited In–Sn–O Thin-Film Transistors with Robust Thermal Stability at 400 $^{\circ}$ C and Downscaling of Channel

Atomic-Layer-Deposited In–Sn–O Thin-Film Transistors With Robust Thermal Stability at 400 °C and Downscaling of Channel

First Demonstration of Highly Scaled Atomic Layer Deposited Ultrathin InSnZnO Channel Thin Film Transistor Exhibiting Superior Electrical Characteristics

Comparative Study of Atomic Layer Deposited Indium-Based Oxide Transistors with a Fermi Energy Level-Engineered Heterojunction Structure Channel through a Cation Combinatorial Approach

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High mobility ultra-thin crystalline indium oxide thin film transistor using atomic layer deposition

Comparative Study on Indium Precursors for Plasma-Enhanced Atomic Layer Deposition of In2O3 and Application to High-Performance Field-Effect Transistors

Fabrication of Indium-Tin-Oxide Thin-Film Transistor Using Anodization