Abstract:Developing a low-temperature fabrication strategy of an amorphous InGaZnO (α-IGZO) channel layer is a prerequisite for high-performance oxide-based thin film transistor (TFT) flexible device applications. Herein, an ultraviolet-assisted oxygen ambient rapid thermal annealing method (UV-ORTA), which combines ultraviolet irradiation with rapid annealing treatment in an oxygen atmosphere, was proposed to realize the achievement of high-performance α-IGZO TFTs at low temperature. Experimental results have confirmed that UV-ORTA treatment has the ability to suppress defects and obtain high-quality films similar to high-temperature-annealing-treated samples. α-IGZO/HfAlO TFTs with high-performance and low-voltage operating have been achieved at a low temperature of 180 °C for 200 s, including a high μsat of 23.12 cm2 V–1 S–1, large Ion/off of 1.1 × 108, small subthreshold swing of 0.08 V/decade, and reliable stability under bias stress, respectively. As a demonstration of complex logic applications, a low-voltage resistor-loaded unipolar inverter based on an α-IGZO/HfAlO TFT has been built, demonstrating full swing characteristics and a high gain of 13.8. Low-frequency noise (LFN) characteristics of α-IGZO/HfAlO TFTs have been presented and concluded that the noise source tended to a carrier number fluctuation (ΔN) model from a carrier number and correlated mobility fluctuation (ΔN–Δμ) model. As a result, it can be inferred that the low-temperature UV-ORTA technique to improve α-IGZO thin film quality provides a facile and designable process for the integration of α-IGZO TFTs into a flexible electronic system.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsnano.2c01286.The device performance with different annealing methods; X-ray reflection experimental and fitted curves of the α-IGZO film before and after UV treatment; transmission spectrum of HfAlO film in the UV–vis region and the (αhν)2 variation with hν; capacitance density vs frequency curve of the HfAlO film; leakage current curves of HfAlO films; α-IGZO/HfAlO TFT output and transfer curves after UV-ORTA treatment with various oxygen pressures; logarithm of absorption coefficients of the α-IGZO thin film as a function of photon energy; electrical properties of devices subjected to UV-ORTA and ORTA processing; thickness and density of α-IGZO films before and after UV treatment; electrical performance parameters of α-IGZO/HfAlO TFTs subjected to UV-ORTA treatment with various oxygen pressures; summary of key electrical characteristics of α-IGZO TFTs prepared by different low-temperature processes; performance parameters of devices with and without UV treatment; reported voltage gain comparison of inverters (PDF)This article has not yet been cited by other publications.

Ultraviolet-Assisted Low-Thermal-Budget-Driven α-InGaZnO Thin Films for High-Performance Transistors and Logic Circuits

Influence of Annealing Temperatures on Solution-Processed Alinzno Thin Film Transistors

Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

High-Performance A-Ingazno Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al2O3 Dielectric

High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric with Ultralow Subthreshold Swing

High-Performance a-IGZO TFT Fabricated With Ultralow Thermal Budget via Microwave Annealing

Balanced Performance Improvement of a-InGaZnO Thin-Film Transistors Using ALD-Derived Al 2 O 3 -Passivated High-k HfGdO x Dielectrics

One-Step Synergistic Treatment Approach for High Performance Amorphous InGaZnO Thin-Film Transistors Fabricated at Room Temperature

Performance Improvement of Atomic Layer-Deposited ZnO/Al2O3Thin-Film Transistors by Low-Temperature Annealing in Air

Improvement of Device Characteristics of Low Temperature IGZO Thin-film Transistors through Laser Post Annealing

Low-Temperature Rapid Preparation of High-Performance Indium Oxide Thin Films and Transistors Based on Solution Process

Ultra-thin top-gate insulator of atomic-layer-deposited HfO x for amorphous InGaZnO thin-film transistors

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al₂O₃ Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

High Performance and Hysteresis-Free a-IGZO Thin Film Transistors Based on Spin-coated Hafnium Oxide Gate Dielectrics

Ultra-thin Gate Insulator of Atomic-Layer-deposited AlOxand HfOxfor Amorphous InGaZnO Thin-Film Transistors.

Transparent Amorphous Indium-Gallium-Zinc-Oxygen Thin Film Transistors Using Solution Technology at Low Temperature

Multifunctional Oxygen Scavenger Layer for High-Performance Oxide Thin-Film Transistors with Low-Temperature Processing

Fabrication of High-Performance A-Igzo Thin-Film Transistor with Post-Annealing Treatment

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al2O3 Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

High Performance (vth ~ 0 V, SS ~ 69 Mv/dec, IOn/IOff ~ 1010) Thin-Film Transistors Using Ultrathin Indium Oxide Channel and SiO2 Passivation

High-Performance Unannealed A-Ingazno Tft with an Atomic-Layer-Deposited Sio2 Insulator