Ultraviolet Photoconductivity of Amorphous Znalsno Thin-Film Transistors

Q. J. Jiang,C. J. Wu,L. S. Feng,G. Y. Yu,L. Gong,Z. Z. Ye,J. G. Lu

DOI: https://doi.org/10.1039/c5ra09670g

IF: 4.036

2015-01-01

RSC Advances

Abstract:Responses of the ZATO TFTs towards 365 nm UV illumination.

What problem does this paper attempt to address?

Ultraviolet Photoresponse of Zno Thin-Film Transistor Fabricated at Room Temperature

Wu Ping,Zhang Jie,Li Xi-Feng,Chen Ling-Xiang,Wang Lei,Lu Jian-Guo

DOI: https://doi.org/10.7498/aps.62.018101

IF: 0.906

2013-01-01

Acta Physica Sinica

Abstract:Transparent thin-film transistor (TFT) with ZnO film as a channel layer is fabricated at room temperature. ZnO film has a high absorption in the UV region and ZnO-TFT is sensitive to the UV illumination. We investigate the ultraviolet photoresponse of ZnO-TFT and find that the illumination with 254 nm light results in an evident photoresponse. The residual conductivity is observed in ZnO channel even the UV light was removed one week before. The UV illumination can induce the formation of oxygen vacancy defects which will act as donors in ZnO channel.
Solution Processed Amorphous ZnSnO Thin-Film Phototransistors

Lisha Feng,Genyuan Yu,Xifeng Li,Jianhua Zhang,Zhizhen Ye,Jianguo Lu

DOI: https://doi.org/10.1109/ted.2016.2632742

IF: 3.1

2016-01-01

IEEE Transactions on Electron Devices

Abstract:Amorphous ZnSnO (a-ZnSnO) thin films were synthesized by a combustion solution method to fabricate thin-phototransistors. The a-ZnSnO phototransistors are extremely sensitive to UV light, with evident photoelectric effect identified at various gate voltages. The UV sensitivity is rather high (similar to 10(5) for the ratio of photocurrent to dark-current) at the off-state, while it is quite low (similar to 10(1)) at the on-state. The device behaviors can completely recover to the original state within 2000 s after switching off the UV light at both on-and off-states. We demonstrate that the UV behaviors of a-ZnSnO phototransistors can be well controlled by gate voltages. This paper is expected to provide a fundamental knowledge of performances of amorphous oxide phototransistors for practical applications.
Influence of Annealing Temperatures on Solution-Processed Alinzno Thin Film Transistors

Yana Gao,Jianguo Lu,Jianhua Zhang,Xifeng Li

DOI: https://doi.org/10.1016/j.jallcom.2015.06.049

IF: 6.2

2015-01-01

Journal of Alloys and Compounds

Abstract:Thin film transistors (TFTs) using solution-processed aluminum indium zinc oxide (AIZO) as a channel layer were fabricated in this study. Influence of annealing temperatures on solution processed AIZO thin films surface, structural and chemical properties had been intensively investigated. The AIZO films existed in an amorphous phase even through the annealing temperature reach up to 500 degrees C. The as-prepared AIZO films with surface root-mean-square roughness values less than 0.6 nm were uniform and smooth. As the annealing temperatures exceeded 400 degrees C, the impurities and hydroxyl groups in the AIZO films had almost no change, demonstrating that the AIZO oxide formation was almost completed. Above all, the solution processed AIZO TFTs exhibit excellent device performance with high saturation mobility of 20.8 cm(2)/V s, threshold voltage of -0.39 V, small subthreshold swing of 0.13 V/dec and high on/off current ratio of 5 x 10(6). (C) 2015 Elsevier B.V. All rights reserved.
Amorphous Znalsno Thin-Film Transistors by A Combustion Solution Process for Future Displays

Qingjun Jiang,Lisha Feng,Chuanjia Wu,Rujie Sun,Xifeng Li,Bin Lu,Zhizhen Ye,Jianguo Lu

DOI: https://doi.org/10.1063/1.4906999

IF: 4

2015-01-01

Applied Physics Letters

Abstract:A combustion solution method was developed to fabricate amorphous ZnAlSnO (a-ZATO) for thin-film transistors (TFTs). The properties of a-ZATO films and behaviors of a-ZATO TFTs were studied in detail. An appropriate Al content in the matrix could suppress the formation of oxygen vacancies efficiently and achieve densely amorphous films. The a-ZATO TFTs exhibited acceptable performances, with an on/off current ratio of ∼106, field-effect mobility of 2.33 cm2·V−1·S−1, threshold voltage of 2.39 V, and subthreshold swing of 0.52 V/decade at an optimal Al content (0.5). The relation between on- and off-resistance of the ZATO TFT was also within the range expected for fast switching devices. More importantly, the introduced Al with an appropriate content had the ability to evidently enhance the device long-term stability under working bias stress and storage durations. The obtained indium- and gallium-free a-ZATO TFTs are very promising for the next-generation displays.
Ultrahigh Sensitivity in the Amorphous ZnSnO UV Photodetector

Weihao Wang,Xinhua Pan,Wen Dai,Yiyu Zeng,Zhizhen Ye

DOI: https://doi.org/10.1039/c6ra02924h

IF: 4.036

2016-01-01

RSC Advances

Abstract:An ultraviolet (UV) photodetector based on amorphous ZnSnO (α-ZTO) channel thin-film transistors (TFTs) with ultrahigh sensitivity was fabricated by a simple sol–gel method. The photodetectors are investigated at various intensities of 365 nm UV illumination, which exhibit ultrahigh sensitivity and responsivity. A reasonable mechanism is proposed for the superior UV detecting performance. Moreover, our device is promising for UV detection under weak UV illumination. The fabrication of the α-ZTO UV photodetector represents a significant step toward future multifunctional optoelectronic applications.
The Investigation of Indium-Free Amorphous Zn-Al-Sn-O Thin Film Transistor Prepared by Magnetron Sputtering

Mingyu Zhang,Kuankuan Lu,Zhuohui Xu,Honglong Ning,Xiaochen Zhang,Junlong Chen,Zhao Yang,Xuan Zeng,Rihui Yao,Junbiao Peng

DOI: https://doi.org/10.3390/coatings11050585

IF: 3.236

2021-05-17

Coatings

Abstract:The indium-free amorphous oxide semiconductor thin film transistor (AOS-TFT) with aluminum (Al) electrodes shows broad application prospects in new-generation display technologies, such as ultra-high definition large-screen display, OLED display and 3D display. In this work, the thin film transistor (TFT) with a zinc-aluminum-tin-oxide (ZATO) semiconductor as the active layer and an Al electrodes as the source and drain (S/D) was investigated. The optical, electrical and semiconductive properties of the ZATO films were evaluated by atomic force microscopy (AFM), ultraviolet–visible spectrophotometry and microwave photoconductivity decay (μ-PCD), respectively. The result shows that the film is smooth and transparent and has low localized states and defects at a moderate oxygen concentration (~5%) and a low sputtering gas pressure (~3 mTorr). After the analysis of the transfer and output characteristics, it can be concluded that the device exhibits an optimal performance at the 623 K annealing temperature with an Ion/Ioff ratio of 5.5 × 107, an SS value of 0.15 V/decade and a saturation mobility (μsat) of 3.73 cm2·V−1·s−1. The ZATO TFT at the 623 K annealing has a −8.01 V negative shift under the −20 V NBS and a 2.66 V positive shift under the 20 V PBS.

materials science, multidisciplinary,physics, applied, coatings & films
Instability Induced by Ultraviolet Light in Zno Thin-Film Transistors

Ping Wu,Jie Zhang,Jianguo Lu,Xifeng Li,Chuanjia Wu,Rujie Sun,Lisha Feng,Qingjun Jiang,Bin Lu,Xinhua Pan,Zhizhen Ye

DOI: https://doi.org/10.1109/ted.2014.2312947

IF: 3.1

2014-01-01

IEEE Transactions on Electron Devices

Abstract:We investigate the electrical properties of ZnO thin-film transistors (TFTs) under the ultraviolet (UV) light illumination to clarify the device reliability. The ON/OFF current ratio of ZnO TFTs shows an evident reduction due to the creation of UV photo-induced current. This behavior degradation becomes severe for devices exposed to a short-wavelength UV light. The persistent photoconductivity is observed in ZnO TFTs under the UV illumination with a much slower decay for the ON-state than the OFF-state, which is attributed to the reduced recombination under a positive gate bias. The UV light instabilities of ZnO TFTs can be explained on the basis of UV photoexcited oxygen vacancies. A feasible mechanism model is proposed in this paper. These observations and analytical model not only provide useful physical insight into the device behaviors, but also offer basic design guideline for oxide TFTs.
Amorphous InGaZnO Thin-Film Transistors with Double-Stacked Channel Layers for Ultraviolet Light Detection

Zenghui Fan,Ao Shen,Yong Xia,Chengyuan Dong

DOI: https://doi.org/10.3390/mi13122099

IF: 3.4

2022-11-28

Micromachines

Abstract:Amorphous InGaZnO thin film transistors (a-IGZO TFTs) with double-stacked channel layers (DSCL) were quite fit for ultraviolet (UV) light detection, where the best DSCL was prepared by the depositions of oxygen-rich (OR) IGZO followed by the oxygen-deficient (OD) IGZO films. We investigated the influences of oxygen partial pressure (PO) for DSCL-TFTs on their sensing abilities by experiments as well as Technology Computer Aided Design (TCAD) simulations. With the increase in PO values for the DSCL depositions, the sensing parameters, including photogenerated current (Iphoto), sensitivity (S), responsivity (R), and detectivity (D*) of the corresponding TFTs, apparently degraded. Compared with PO variations for the OR-IGZO films, those for the OD-IGZO depositions more strongly influenced the sensing performances of the DSCL-TFT UV light detectors. The TCAD simulations showed that the variations of the electron concentrations (or oxygen vacancy (VO) density) with PO values under UV light illuminations might account for these experimental results. Finally, some design guidelines for DSCL-TFT UV light detectors were proposed, which might benefit the potential applications of these novel semiconductor devices.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
Ultrathin Amorphous ZnGexSnO Films for High Performance Ultra-Thin-film Transistors

Shilu Yue,Jianguo Lu,Rongkai Lu,Siqin Li,Xifeng Li,Jianhua Zhang,Lingxiang Chen,Zhizhen Ye

DOI: https://doi.org/10.1063/1.5031448

IF: 4

2018-01-01

Applied Physics Letters

Abstract:Ultrathin amorphous ZnSnO (a-ZTO) films and ultrathin amorphous ZnGeSnO (a-ZGTO) films with various Ge contents were deposited by pulsed laser deposition for ultra-thin-film transistors (UTFTs). The thicknesses of the channel layers are approximately 3.2 nm. The properties of these ultrathin films and behaviors of these UTFTs were comparatively studied in detail. The a-ZTO ultrathin film exhibited a low concentration of the oxygen vacancy (VO) compared to a-ZGTO ultrathin films. Among all the UTFTs, the a-ZTO UTFT demonstrated the undoubtedly best performance with an on/off current ratio of more than 107, the largest field-effect mobility of 23.2 cm2 V−1 s−1, a positive threshold voltage of 2.0 V, a very small subthreshold swing of 0.31 V/decade, and the best long-term stability under bias stress, suggesting that the introduction of VO suppressors is dispensable with such a small thickness. Above all, the concentration of the oxygen vacancy is easily controlled in the ultrathin a-ZTO nanofilms, leading to the UTFTs operating in the enhancement mode with a high field-effect mobility of 23.2 cm2 V−1 s−1 and excellent long-term stability. The a-ZTO ultrathin film and ultra-thin-film transistor are very potential for future electrical applications with their excellent properties.
Solvent Sensors Based on Amorphous Znsno Thin-Film Transistors

Q. J. Jiang,C. J. Wu,J. P. Cheng,X. D. Li,B. Lu,Z. Z. Ye,J. G. Lu

DOI: https://doi.org/10.1039/c5ra02125a

IF: 4.036

2015-01-01

RSC Advances

Abstract:A feasible mechanism model is proposed to explain the strong sensitivity of a-ZTO TFTs towards solvents.
Ultra-thin-film Transistors Based on Ultra-Thin Amorphous ZnSnO Films

Shilu Yue,Jianguo Lu,Rongkai Lu,Siqin Li,Bojing Lu,Xifeng Li,Jianhua Zhang,Yu-Jia Zeng,Zhizhen Ye

DOI: https://doi.org/10.1007/s00339-018-2280-3

2018-01-01

Abstract:Ultra-thin amorphous ZnSnO (a-ZTO) films were deposited by pulsed laser deposition at room temperature and annealed at various temperatures for ultra-thin-film transistors (UTFTs). The thicknesses of the ultra-thin a-ZTO films are approximately 3.1 nm. The electrical resistivity of the nanofilms decreases greatly with the annealing temperature initially increasing. All the UTFTs with annealing temperature ranging from 250 to 450 °C exhibit good switching properties operating in the enhancement mode with the field-effect mobility of above 8.2 cm2 V−1 s−1. The annealing treatment exhibits extreme importance for the UTFTs to obtain better performance as oxygen vacancy is controlled easily in the ultra-thin films by annealing. The 350 °C-annealed a-ZTO UTFT depicts the largest field-effect mobility of 20.9 cm2 V−1 s−1, the minimum threshold voltage of 2.3 V, the minimum subthreshold swing of 0.339 V/decade, the minimum density of the interfacial trap states of 1.02 × 1012 cm−2 and a large on/off current ratio of 3.3 × 107. Besides, the UTFT with the annealing temperature of 450 °C depicts excellent long-term stability under bias stress due to the least oxygen vacancies. The observations will offer basic design guideline for improvement and future applications of UTFTs.
Ultrathin-Film Transistors Based on Ultrathin Amorphous InZnO Films

Shilu Yue,Jianguo Lu,Rongkai Lu,Siqin Li,Bojing Lu,Yi Zhao,Xifeng Li,Jianhua Zhang,Zhizhen Ye

DOI: https://doi.org/10.1109/ted.2019.2913866

IF: 3.1

2019-01-01

IEEE Transactions on Electron Devices

Abstract:Ultrathin amorphous InZnO (a-IZO) films and the corresponding ultrathin-film transistors (UTFTs) have been prepared by pulsed laser deposition (PLD) for the first time here. With ultrathin amorphous ZnSnO (a-ZTO) films and the related UTFTs as a comparison, the properties of ultrathin a-IZO films and behaviors of the corresponding UTFTs were studied in detail. Also, we have taken a new approach to compare the content of oxygen vacancies (V-O) in amorphous oxide semiconductors (AOSs) of different systems, which explains their different properties and behaviors well. The thickness of the ultrathin a-IZO film is approximately 3.1 nm. Compared to ultrathin a-ZTO films, ultrathin a-IZO films depict lower V-O content and lower carrier concentration. In addition, ultrathin a-IZO films display very high transmittance over 95% in the visible region. Furthermore, a-IZO UTFTs exhibit better performance than a-ZTO UTFT, such as a lower off-current of 3.3 x 10(-10) A, a larger I-ON/I-OFF ratio of 1.5 x 10(7), a larger mu(sat) of 20.7 cm(2) V-1 s(-1), a smaller V-th of 1.2 V (operating in the enhancement mode), a lower subthreshold swing (SS) of 0.303 V/decade, and a lower N-t of 8.9 x 10(11) cm(-2). Meanwhile, the long-term stability of a-IZO UTFT is similar to a-ZTO UTFT. Above all, a-IZO UTFTs exhibit excellent performance and may be a promising candidate for future displays.
Function of a Dual-Active-Layer Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistor with Ultraviolet-Induced Effects

Po-Hsun Chen,Hong-Chih Chen,Chuan-Wei Kuo,Jian-Jie Chen,Hui-Chun Huang

DOI: https://doi.org/10.1021/acsaelm.2c01670

IF: 4.494

2023-04-07

ACS Applied Electronic Materials

Abstract:This study presents an ultraviolet (UV) photodetector based on a dual-active-layer amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistor (TFT), where a Zn-rich IGZO layer is designed as a charge trapping center due to its oxygen vacancies and easy-to-generate interface defects. When a drain bias of 10 V is given, the electron injection occurs closer to the drain end, which causes the active layer to exhibit a significant resistance effect. This phenomenon is clearly observed in the unilateral capacitance–voltage (C–V) measurement. During the irradiation with a UV light source, holes are induced close to the electron injection location in Zn-rich bulk. These holes induced by UV light will cause barrier lowering effects and generate additional photocurrent under UV irradiation. The contrast current under UV light indicates that the on–off ratio between light-induced and dark current reaches 106 in dark conditions. In addition, this device has excellent light response and recovery speed in various light pulse environments. The high sensitivity and the high stability of this dual-active-layer UV light sensing TFT are beneficial to comprehensive and versatile applications in the semiconductor panel industry.

materials science, multidisciplinary,engineering, electrical & electronic
Ultra-Violet Light Enhanced Super Critical Fluid Treatment In In-Ga-Zn-O Thin Film Transistor

hsinlu chen,tingchang chang,taifa young,tsungming tsai,kuanchang chang,rui zhang,kaihuang chen,j c lou,minchen chen,chihcheng shih,syuanyong huang,junghui chen

DOI: https://doi.org/10.1063/1.4883899

IF: 4

2014-01-01

Applied Physics Letters

Abstract:A low-temperature ultra-violet (UV) light enhanced supercritical CO2 (SCCO2) fluid treatment is employed to improve the performance of In-Ga-Zn-O (IGZO) thin film transistor (TFT) device. In this study, amorphous IGZO film deposited by sputtering is investigated in SCCO2 ambient under different illumination conditions. After SCCO2 treatment with UV exposure, the mobility and subthreshold swing of the TFT can be significantly improved. A model is proposed to explain the mechanism, and the improvement is due to the reduction of dangling bonds at the grain boundary. With the help of UV, dangling bonds can be effectively passivated by OH chemical groups. (C) 2014 AIP Publishing LLC.
Photoresponse of InGaZnO thin film transistor to ultraviolet illumination

Bolin Shan,Libin Liu,Chuanchuan Sun,Jing Wang,Jun Xu,Renrong Liang

DOI: https://doi.org/10.1109/ISNE.2016.7543282

2016-01-01

Abstract:An amorphous indium gallium zinc oxide (IGZO) thin film transistor (TFT) was fabricated and its respose to 405 nm ultraviolet illumination was investigated. It is found that the OFF-state current is dramaticaly influenced by the illumation. The photoresponse, including photocurrent, rise time and recovery time, is dependent on the bias condition, especially the gate voltage (Vgs). Higher photocurrent and smaller rise time are observed at higher Vgs, indicating that a lower Vgs is desired for a faster recovery characteristic.
Light Response Behaviors of Amorphous In–Ga–Zn–O Thin-Film Transistors Via in Situ Interfacial Hydrogen Doping Modulation

Xiao-Lin Wang,Yan Shao,Xiaohan Wu,Mei-Na Zhang,Lingkai Li,Wen-Jun Liu,David Wei Zhang,Shi-Jin Ding

DOI: https://doi.org/10.1039/c9ra09646a

IF: 4.036

2020-01-01

RSC Advances

Abstract:Thin-film transistors (TFTs) based on amorphous In–Ga–Zn–O (a-IGZO) channels present high mobility, large-area uniformity, mechanical flexibility and photosensitivity, and thus have extensive applicability in photodetectors, wearable devices, etc. However, pure a-IGZO based photosensors only exhibit a UV light response with limited sensitivity performance. By utilizing in situ interfacial hydrogen doping, it is demonstrated that the a-IGZO TFTs with the Al2O3 dielectric deposited by plasma-enhanced atomic layer deposition at room temperature (RT) have excellent photosensing performance, such as a photoresponsivity of over 6 × 105 A W−1 and a light to dark current ratio up to 107. This is attributed to spontaneous interfacial hydrogen doping into the a-IGZO channel during sputtering deposition of a-IGZO on hydrogen-rich Al2O3 films, thus generating subgap states in the band gap of IGZO. Further, color pattern imaging was achieved by employing an array of the color distinguishable devices, and flexibility was demonstrated by fabricating the TFTs onto polymer substrates. Moreover, it is also found that both the RT and 150 °C Al2O3 a-IGZO TFTs exhibit typical light-stimulated synaptic behaviors, including excitatory post-synaptic current and pair-pules facilitation, etc., and the memory time of the synaptic devices can be easily modulated by the degree of the interfacial hydrogen doping.
Self-Aligned Top-Gate Amorphous Zinc-Tin Oxide Thin-Film Transistor with Source/Drain Regions Doped by Al Reaction

Huan Yang,Jiye Li,Xiaoliang Zhou,Lei Lu,Shengdong Zhang

DOI: https://doi.org/10.1109/JEDS.2021.3094281

2021-01-01

IEEE Journal of the Electron Devices Society

Abstract:A self-aligned fabrication process for top-gate amorphous zinc-tin oxide (a-ZTO) thin-film transistors (TFTs) is developed, in which the source/drain (S/D) doping is realized through depositing a thin aluminum (Al) film on S/D regions and performing a thermal annealing. Results indicate that a chemical oxidation-reduction reaction between Al and a-ZTO films takes place during the thermal annealing process, and shallow donors of oxygen vacancies and metal tin (Sn) interstitials are thus generated. The formed S/D regions have a high carrier concentration over 1 x 10(20) cm(-3), low sheet resistance of 0.57 k Omega/sq, and high thermal stability even in oxygen ambient. The fabricated a-ZTO TFTs exhibit excellent electrical performances, including a low channel-width-normalized S/D resistance of about 7.05 Omega cm, a high field-effect mobility of 15.7 cm(2)/Vs, a high on/off current ratio of over 10(8), and near-zero turn-on voltage. Moreover, good electrical stability with less than 0.2-V threshold voltage shift under +/- 30-V gate bias stresses is also achieved.
37.3: Self‐Aligned Top‐Gate Amorphous ZnSnO Thin‐Film Transistor with Thermal‐Stable Al Reaction‐Doped Source/Drain

Huan Yang,Jiye Li,Xiaoliang Zhou,Lei Lu,Shengdong Zhang

DOI: https://doi.org/10.1002/sdtp.15961

2022-01-01

Abstract:This work develops self‐aligned top‐gate (SATG) amorphous ZnSnO (a‐ZTO) thin‐film transistor (TFT) with thermal‐stable low‐resistance source/drain regions using Al reaction method. Compared with Ar plasma treatment, Al reaction doped a‐ZTO films exhibit higher carrier concentration, lower resistance and better thermal stability in oxygen ambient. The fabricated SATG a‐ZTO TFT with Al reaction doped source/drain thus shows excellent electrical performance, such as low channel width normalized source/drain resistance of 7.1 Ω cm, high mobility of 15.7 cm2/Vs. Moreover, good electrical stabilities under high‐temperature oxygen ambient or gate bias stresses are also obtained in Al reaction treated devices.
Performance enhancement of ATZO TFTs by component control and post treatment

Zhuang Yi,Dedong Han,Junchen Dong,Huijin Li,Dazhong Zhou,Xing Zhang,Yi Wang

DOI: https://doi.org/10.1109/ICSICT49897.2020.9278013

2020-01-01

Abstract:Al-Sn-Zn-O (ATZO) was developed as an In-free oxide semiconductor for thin film transistors (TFTs) channel layer. In this paper we fabricated ATZO TFTs and optimized the electrical performance by adjusting the concentration of Al and Sn in ATZO, post annealing and plasma treatment. It was found that higher Al and Sn concentration leads to lower grain size and higher TFT on/off ratio, and post annealing in air helps to enhance the mobility of ATZO TFTs. N 2 O plasma treatment significantly suppress the off current without a degradation of mobility. By combining aforementioned methods, ATZO TFTs with Ion/I off of 5.77×107, and subthreshold swing (SS) of 0.205 V/dec was achieved, which shows potential for flat panel display applications.
Effect of Mg Content on Characteristics of Amorphous ZnMgSnO Thin-Film Transistors by a Combustion Solution Process

Lu Bojing,Cheng Xiaohan,Liu Rumin,Lu Jianguo,Li Siqin,Chen Lingxiang,Ye Zhizhen

DOI: https://doi.org/10.1007/s00339-020-04042-y

2020-01-01

Applied Physics A

Abstract:Amorphous zinc–magnesium–tin oxide (a-ZMTO), a new kind of amorphous oxide semiconductors (AOSs), was prepared for fabricating thin-film transistors (TFTs) by a combustion solution process. The prepared ZnMgSnO films have a high amorphous quality with smooth surface, evenly distributed elements, as well as high visible transmittance above 80% with a width of band gap of around 3.12 eV. The effects of Mg content on properties of films and performance of devices were investigated in detail. An appropriate Mg content could efficiently suppress the oxygen vacancy (VO) concentration and make the surface smoother, thereby enhancing the properties of films and performance of related a-ZMTO TFTs. The a-ZMTO TFTs exhibited acceptable performances, with field-effect mobility (μFE) of 0.083 cm2 V−1 S−1, on/off current ratio (Ion/Ioff) of around 3.0 × 104, and threshold voltage (Vth) of 1.42 V. The a-ZMTO films and ZMTO TFTs may offer an option of indium-free AOS materials for future application in transparent electronics.

Ultraviolet Photoconductivity of Amorphous Znalsno Thin-Film Transistors

Ultraviolet Photoresponse of Zno Thin-Film Transistor Fabricated at Room Temperature

Solution Processed Amorphous ZnSnO Thin-Film Phototransistors

Influence of Annealing Temperatures on Solution-Processed Alinzno Thin Film Transistors

Amorphous Znalsno Thin-Film Transistors by A Combustion Solution Process for Future Displays

Ultrahigh Sensitivity in the Amorphous ZnSnO UV Photodetector

The Investigation of Indium-Free Amorphous Zn-Al-Sn-O Thin Film Transistor Prepared by Magnetron Sputtering

Instability Induced by Ultraviolet Light in Zno Thin-Film Transistors

Amorphous InGaZnO Thin-Film Transistors with Double-Stacked Channel Layers for Ultraviolet Light Detection

Ultrathin Amorphous ZnGexSnO Films for High Performance Ultra-Thin-film Transistors

Solvent Sensors Based on Amorphous Znsno Thin-Film Transistors

Ultra-thin-film Transistors Based on Ultra-Thin Amorphous ZnSnO Films

Ultrathin-Film Transistors Based on Ultrathin Amorphous InZnO Films

Function of a Dual-Active-Layer Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistor with Ultraviolet-Induced Effects

Ultra-Violet Light Enhanced Super Critical Fluid Treatment In In-Ga-Zn-O Thin Film Transistor

Photoresponse of InGaZnO thin film transistor to ultraviolet illumination

Light Response Behaviors of Amorphous In–Ga–Zn–O Thin-Film Transistors Via in Situ Interfacial Hydrogen Doping Modulation

Self-Aligned Top-Gate Amorphous Zinc-Tin Oxide Thin-Film Transistor with Source/Drain Regions Doped by Al Reaction

37.3: Self‐Aligned Top‐Gate Amorphous ZnSnO Thin‐Film Transistor with Thermal‐Stable Al Reaction‐Doped Source/Drain

Performance enhancement of ATZO TFTs by component control and post treatment

Effect of Mg Content on Characteristics of Amorphous ZnMgSnO Thin-Film Transistors by a Combustion Solution Process