Abstract:IGZO phototransistor with an additional ZnO absorption layer is fabricated. The ZnO absorption layer effectively absorbs UV light below 360 nm wavelength. A high UV–vis rejection ratio is achieved with an additional ZnO absorption layer. The depletion of the ozone layer over the last four decades has increased Earth's exposure to ultraviolet (UV) radiation, posing significant health risks. Indium‐Gallium‐Zinc‐Oxide (IGZO) phototransistors have emerged as promising UV detection candidates, boasting a wide bandgap (>3 eV), low off‐current, high on‐current, and stability. However, previous efforts to enhance the photoresponse of IGZO phototransistors focused on visible light absorption layers, neglecting UV detection. Here, zinc oxide (ZnO) nanoparticles (NPs) as an absorption layer in IGZO TFTs for UV phototransistors are introduced. IGZO/ZnO TFTs exhibit robust photoresponsivity for UV light below 360 nm, showcasing rejection ratios (Ruv / Rvis) of 20 258, 62 261, 193 649, and 401 582 for wavelengths of 360, 340, 320, and 300 nm, respectively. The combination of IGZO's wide bandgap with ZnO NPs proves effective for detecting UV light below 360 nm, even at low incident light intensities (15 μW cm−2). Enhanced photoresponse characteristics are confirmed via ultraviolet photoelectron spectroscopy. This research highlights the potential of IGZO materials for UV phototransistors and introduces a novel perspective on the utilization of an additional absorption layer traditionally employed for the conventional extension into the visible light range.

Photoresponse of InGaZnO thin film transistor to ultraviolet illumination

Ultraviolet Photoresponse of ZnO Thin-Film Transistor Fabricated at Room Temperature

Enhanced Photoresponse of Ingazno Tft to Ultraviolet Illumination by Using A High-K Dielectric

Surface Pattern and Optical Properties of In-doped ZnO Thin Films by Hydrothermal Method

Design and Fabrication of Photo-Sensitive Thin-Film Transistors with IGZO and Organic Photo-Absorber

P‐1.17: Ultraviolet Light Response of Amorphous Oxide Thin‐Film Transistors with Double‐Stacked Channel Layers

Light Response Behaviors of Amorphous In–Ga–Zn–O Thin-Film Transistors Via in Situ Interfacial Hydrogen Doping Modulation

Photo-electrical Properties of Amorphous MgInO Thin Film Transistors

Enhanced UV–visible Detection of InGaZnO Phototransistors Via CsPbBr3 Quantum Dots

Effects of Wavelength and Geometrical Condition on Photosensitivity of Self-Aligned Top-Gate Amorphous InZnO Thin Film Transistors

Ultraviolet Photoconductivity of Amorphous ZnAlSnO Thin-Film Transistors

Function of a Dual-Active-Layer Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistor with Ultraviolet-Induced Effects

Ultraviolet detecting properties of amorphous MgInO thin film phototransistors

Amorphous InGaZnO Thin-Film Transistors with Double-Stacked Channel Layers for Ultraviolet Light Detection

Fabrication and performance of indium oxide based transparent thin film transistors

Photosensitivity of solution-based indium gallium zinc oxide single-walled carbon nanotubes blend thin film transistors

P‐1.9: Effect of Wavelength on Photoresponse Characteristics of Amorphous InZnO Thin Film Transistors

Ultra-Violet Light Enhanced Super Critical Fluid Treatment In In-Ga-Zn-O Thin Film Transistor

Instability Induced by Ultraviolet Light in Zno Thin-Film Transistors

Electrical And Photosensitive Characteristics Of A-Igzo Tfts Related To Oxygen Vacancy

High Rejection‐Ratio IGZO Ultraviolet Phototransistor via Additional Solution Processed ZnO Absorption Layer