Abstract:IGZO phototransistor with an additional ZnO absorption layer is fabricated. The ZnO absorption layer effectively absorbs UV light below 360 nm wavelength. A high UV–vis rejection ratio is achieved with an additional ZnO absorption layer. The depletion of the ozone layer over the last four decades has increased Earth's exposure to ultraviolet (UV) radiation, posing significant health risks. Indium‐Gallium‐Zinc‐Oxide (IGZO) phototransistors have emerged as promising UV detection candidates, boasting a wide bandgap (>3 eV), low off‐current, high on‐current, and stability. However, previous efforts to enhance the photoresponse of IGZO phototransistors focused on visible light absorption layers, neglecting UV detection. Here, zinc oxide (ZnO) nanoparticles (NPs) as an absorption layer in IGZO TFTs for UV phototransistors are introduced. IGZO/ZnO TFTs exhibit robust photoresponsivity for UV light below 360 nm, showcasing rejection ratios (Ruv / Rvis) of 20 258, 62 261, 193 649, and 401 582 for wavelengths of 360, 340, 320, and 300 nm, respectively. The combination of IGZO's wide bandgap with ZnO NPs proves effective for detecting UV light below 360 nm, even at low incident light intensities (15 μW cm−2). Enhanced photoresponse characteristics are confirmed via ultraviolet photoelectron spectroscopy. This research highlights the potential of IGZO materials for UV phototransistors and introduces a novel perspective on the utilization of an additional absorption layer traditionally employed for the conventional extension into the visible light range.

P‐1.17: Ultraviolet Light Response of Amorphous Oxide Thin‐Film Transistors with Double‐Stacked Channel Layers

Amorphous InGaZnO Thin-Film Transistors with Double-Stacked Channel Layers for Ultraviolet Light Detection

Ultraviolet Photoresponse of ZnO Thin-Film Transistor Fabricated at Room Temperature

17‐1: Persistent Photoconductivity Suppression in Amorphous Oxide Thin‐Film Transistors with Double‐Stacked Channel Layers

High-performance IGZO/Ga2O3 dual-active-layer thin film transistor for deep UV detection

Function of a Dual-Active-Layer Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistor with Ultraviolet-Induced Effects

Oxide Thin-Film Transistors With IMO and IGZO Stacked Active Layers for UV Detection

Amorphous InGaMgO Ultraviolet Photo-TFT with Ultrahigh Photosensitivity and Extremely Large Responsivity.

Ultraviolet photodetectors based on Si-Zn-SnO thin film transistors with a stacked channel structure and a patterned NiO capping layer

Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers

Light Response Behaviors of Amorphous In–Ga–Zn–O Thin-Film Transistors Via in Situ Interfacial Hydrogen Doping Modulation

Photoresponse of InGaZnO thin film transistor to ultraviolet illumination

Nitrogen-doped Amorphous Oxide Semiconductor Thin Film Transistors with Double-Stacked Channel Layers

Enhanced UV–visible Detection of InGaZnO Phototransistors Via CsPbBr3 Quantum Dots

Enhancing photodetection performance of UV photodetectors with stacked Pt/NiO dual capping layers on IGZO thin-film transistors

Improvements in passivation effect of amorphous InGaZnO thin film transistors

Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels*

The Fabrication and Ultraviolet Detecting Properties of ZnMgO-based Thin Film Transistor by Laser Molecular Beam Epitaxy

High Rejection‐Ratio IGZO Ultraviolet Phototransistor via Additional Solution Processed ZnO Absorption Layer

P-1.14: The Influence of Dual-channel on the Performance of Self-Align Top-Gate IGZO Thin Film Transistors

Modulation of Interface and Bulk States in Amorphous InGaZnO Thin-Film Transistors with Double Stacked Channel Layers