Abstract:IGZO phototransistor with an additional ZnO absorption layer is fabricated. The ZnO absorption layer effectively absorbs UV light below 360 nm wavelength. A high UV–vis rejection ratio is achieved with an additional ZnO absorption layer. The depletion of the ozone layer over the last four decades has increased Earth's exposure to ultraviolet (UV) radiation, posing significant health risks. Indium‐Gallium‐Zinc‐Oxide (IGZO) phototransistors have emerged as promising UV detection candidates, boasting a wide bandgap (>3 eV), low off‐current, high on‐current, and stability. However, previous efforts to enhance the photoresponse of IGZO phototransistors focused on visible light absorption layers, neglecting UV detection. Here, zinc oxide (ZnO) nanoparticles (NPs) as an absorption layer in IGZO TFTs for UV phototransistors are introduced. IGZO/ZnO TFTs exhibit robust photoresponsivity for UV light below 360 nm, showcasing rejection ratios (Ruv / Rvis) of 20 258, 62 261, 193 649, and 401 582 for wavelengths of 360, 340, 320, and 300 nm, respectively. The combination of IGZO's wide bandgap with ZnO NPs proves effective for detecting UV light below 360 nm, even at low incident light intensities (15 μW cm−2). Enhanced photoresponse characteristics are confirmed via ultraviolet photoelectron spectroscopy. This research highlights the potential of IGZO materials for UV phototransistors and introduces a novel perspective on the utilization of an additional absorption layer traditionally employed for the conventional extension into the visible light range.

Function of a Dual-Active-Layer Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistor with Ultraviolet-Induced Effects

Ultraviolet Photoresponse of ZnO Thin-Film Transistor Fabricated at Room Temperature

Oxide Thin-Film Transistors With IMO and IGZO Stacked Active Layers for UV Detection

High-performance IGZO/Ga2O3 dual-active-layer thin film transistor for deep UV detection

Amorphous InGaZnO Thin-Film Transistors with Double-Stacked Channel Layers for Ultraviolet Light Detection

Low-voltage IGZO field-effect ultraviolet photodiode

Ultraviolet photodetectors based on Si-Zn-SnO thin film transistors with a stacked channel structure and a patterned NiO capping layer

P‐1.17: Ultraviolet Light Response of Amorphous Oxide Thin‐Film Transistors with Double‐Stacked Channel Layers

Enhanced UV–visible Detection of InGaZnO Phototransistors Via CsPbBr3 Quantum Dots

Effects of Ultraviolet Light on the Dual-Sweep $I$ – $V$ Curve of A-Ingazno 4 Thin-Film Transistor

Enhancing photodetection performance of UV photodetectors with stacked Pt/NiO dual capping layers on IGZO thin-film transistors

High Rejection‐Ratio IGZO Ultraviolet Phototransistor via Additional Solution Processed ZnO Absorption Layer

Light Response Behaviors of Amorphous In–Ga–Zn–O Thin-Film Transistors Via in Situ Interfacial Hydrogen Doping Modulation

Heterogeneous Metal Oxide Channel Structure for Ultra-High Sensitivity Phototransistor with Modulated Operating Conditions

Advancements in Dual-Function UV-Visible Light Detection

Ultraviolet Photoconductivity of Amorphous ZnAlSnO Thin-Film Transistors

Solution‐Grown Organic Single‐Crystal Field‐Effect Transistors with Ultrahigh Response to Visible‐Blind and Deep UV Signals

Modulation of Oxygen Vacancies in InSnZnO Thin Films and Applications for High-Speed Metal-Semiconductor-metal Ultraviolet Photodetectors

Photoresponse of InGaZnO thin film transistor to ultraviolet illumination

Plasmon‐Enhanced InGaZnO Ultraviolet Photodetectors Tuned by Ferroelectric HfZrO

Realization of Visible‐Light Detection in InGaZnO Thin‐Film Transistor via Oxygen Vacancy Modulation through N2 Treatments