Graded Channel Junctionless InGaZnO Thin-Film Transistors with Both High Transporting Properties and Good Bias Stress Stability
Jie Liu,Jianlei Guo,Wenlong Yang,Cuiru Wang,Bin Yuan,Jia Liu,Zhiheng Wu,Qing Zhang,Dapu Liu,Huixin Chen,Yinyin Yu,Suilin Liu,Guosheng Shao,Zhiqiang Yao
DOI: https://doi.org/10.1021/acsami.0c13873
2020-09-04
Abstract:InGaZnO (IGZO) is currently the most prominent oxide semiconductor complement to low-temperature polysilicon for thin-film transistor (TFT) applications in flat panel displays. However, the compromised transport performance and bias stress instability are critical issues inhibiting its application in ultrahigh-resolution optoelectronic displays. Here, we report the fabrication of graded channel junctionless IGZO:O|N TFTs with both high transporting properties and good bias stress stability by systematic manipulation of oxygen vacancy (V<sub>O</sub>) defects through sequential O antidoping and O/N codoping of the continuous IGZO framework. The transporting properties and bias stress stability of the graded channel IGZO:O|N TFTs, which exhibited high field-effect mobilities close to 100 cm<sup>2</sup> V<sup>–1</sup> s<sup>–1</sup>, negligible performance degradations, and trivial threshold voltage shifts against gate bias stress and photobias stress, are simultaneously improved compared to those of the controlled single-channel uniformly doped IGZO:O TFTs, IGZO:N TFTs, and double-channel barrier-confined IGZO:O/IGZO:N TFTs. The synergistic improvements are attributed to the sequential mobility and stability enhancement effects of O antidoping and O/N codoping where triple saturation currents are induced by O antidoping of the front-channel regime while the trapped electrons and photoexcited holes in the back-channel bulk and surface regions are suppressed by O/N codoping. More importantly, fast accumulation and barrier-free full depletion are rationally realized by eliminating the junction interface within the graded channel layer. Our observation identifies that graded channel doping could be a powerful way to synergistically boost up the transport performance and bias stress stability of oxide TFTs for new-generation ultrahigh-definition display applications.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c13873?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c13873</a>.Cross-sectional SEM images of the bottom-gate top-contact IGZO TFTs, dielectric performance of the AHA gate insulator, wide XPS spectra of the IGZO films deposited with different <i>f</i><sub>N<sub>2</sub></sub> values, channel length-dependent resistance measured by the transmission line method, PBS and NBIS stabilities of the IGZO:N TFTs fabricated with <i>f</i><sub>N<sub>2</sub></sub> = 0.8 sccm, variation of <i>f</i><sub>O<sub>2</sub></sub> and <i>f</i><sub>N<sub>2</sub></sub> during sequential growth of the graded channel junctionless IGZO:O|N layer and the corresponding spatial distributions of V<sub>O</sub> and <i>N</i><sub>e</sub>, statistical studies on electrical properties for IGZO TFTs, schematic illustration of the device structure of bilayer-channel IGZO:O/IGZO:N TFTs, optical transmittance and band gap of the separate IGZO:O and IGZO:N channel layers grown on quartz substrates, and UPS valence band spectra of the IGZO:O (1.5 nm)/IGZO:N (8.0 nm) bilayer junction and IGZO:N (8.0 nm)/IGZO:O (1.5 nm) bilayer junction (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c13873/suppl_file/am0c13873_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,nanoscience & nanotechnology