Abstract:Low cost, high absorption coefficient, tunable band gap, and compatibility with flexible devices make lead sulfide (PbS) quantum dots (QDs) based photoconductors promising candidates for next-generation near-infrared (NIR) photodetectors. However, the detection performance of PbS QDs-based photoconductors still needs to be further improved, because there is a trade-off among the responsivity/detectivity/bandwidth in the device development process, that is, it is difficult to improve the three parameters simultaneously. Inspired by the design idea of sensitized phototransistor, a kind of amorphous indium gallium zinc oxide (a-IGZO)/PbS QDs heterojunction photoconductor is reported in this paper. The most prominent feature of this work is that a-IGZO, like a photocurrent “amplifier”, increases the photocurrent by several orders of magnitude without generating additional noise, and thus improves the sensitivity and responsiveness of the device. Compared with the initial pure PbS QDs-based photoconductor, the heterojunction device is able to increase the photocurrent by 3000 times together with a low dark current, and improve the response speed of the device with the help of interface-assisted carrier separation and recombination. In the NIR band, the device exhibits an exciting performance with a detectivity of 1.53 × 1013 Jones, a responsivity of 19070 mA/W and a decay time of 0.39 ms, respectively. By applying the a-IGZO/PbS QDs heterojunction to paper-based devices, a flexible device with bending resistance can be obtained, and the detection performance of the device does not deteriorate after 1000 times of bending.

Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels*

Enhanced UV–visible Detection of InGaZnO Phototransistors Via CsPbBr3 Quantum Dots

Hybrid Field-Effect Transistors and Photodetectors Based on Organic Semiconductor and CsPbI3 Perovskite Nanorods Bilayer Structure

Design and Fabrication of Photo-Sensitive Thin-Film Transistors with IGZO and Organic Photo-Absorber

Dual-Gate Phototransistor with Perovskite Quantum Dots-Pmma Photosensing Nanocomposite Insulator

High-Performance Inorganic Perovskite Quantum Dot-Organic Semiconductor Hybrid Phototransistors

Hybrid Interfacial Engineering: An Enabling Strategy for Highly Sensitive and Stable Perovskite Quantum Dots/Organic Heterojunction Phototransistors

25.2: High Detectivity Perovskite‐IGZO Phototransistor with Tunable Photoconductive Gain

Light Response Behaviors of Amorphous In–Ga–Zn–O Thin-Film Transistors Via in Situ Interfacial Hydrogen Doping Modulation

Photo-Modulated Thin Film Transistor Based On Dynamic Charge Transfer Within Quantum-Dots-Ingazno Interface

Gate Voltage Adjusting PbS‐I Quantum‐Dot‐Sensitized InGaZnO Hybrid Phototransistor with High‐Sensitivity

High-Performance Photodetector with a-IGZO/PbS Quantum Dots Heterojunction

A Novel Phototransistor Device With Dual Active Layers Composited Of Cspbbr3 And Zno Quantum Dots

A High-Responsivity 30 Μm × 30 Μm Perovskite-IGZO Phototransistor for Weak Light Detection

A high-performance photodetector based on a ZnO/CsPbBr3 quantum-dot-level-contact hybrid sandwich structure

Transparent CsPbBr3 Quantum Dot Photodetector with a Vertical Transistor Structure

All-Inorganic Perovskite Quantum Dot-Monolayer MoS2 Mixed-Dimensional Van Der Waals Heterostructure for Ultrasensitive Photodetector.

Infrared Phototransistor Induced by MoS 2 Quantum Dots Encapsulated in Lead Iodide Perovskite

Photosensitive properties of α-IGZO thin-film field-effect transistors

A high-performance photodetector based on an inorganic perovskite–ZnO heterostructure

Enhanced Detectivity and Suppressed Dark Current of Perovskite-InGaZnO Phototransistor via PCBM Interlayer.