Abstract:The photodetector with MAPbI3:MA3Bi2I9 perovskite bulk heterojunction as the light‐absorbing layer and hexyltrimethylammonium bromide (HTAB) as the barrier layer is prepared. Under the synergistic effect of the external electric field and barrier layer, the tunneling probability of the MAPbI3 photogenerated carriers in the bulk heterojunction can be effectively regulated to confer the photodetector band‐selective function. Photodetectors (PDs) with band selection functions are highly desirable for the future complex environment. Currently, band‐selective PDs are typically realized by integrating various optical filters with broadband PDs or constructing heterojunction with multi‐photo‐absorbing layers. However, these methods cause increased manufacturing costs and device integration complexity. Here, a novel solution‐processed perovskite bulk heterojunction (BHJ) layer (MAPbI3:MA3Bi2I9) is developed as photo‐absorbing layer, and an effective interface engineering is proposed to selectively shield photo‐generated carriers in the BHJ. By regulating the bias voltage, the tunneling probability of photo‐generated carrier of MAPbI3 in the BHJ layer can be easily controlled, enabling band‐selective capability. The PD exhibits a superior photo‐response in the visible and near‐infrared region at the −0.3 V, with responsivity of 26.5 and 70.2 mA W−1 for 500 and 740 nm, respectively. But, at the 0.1 V, the PD responds only to the visible region with a photo‐response of 3.7 mA W−1 (500 nm) and maintains a high rejection ratio (R500 nm/R740 nm) of 28.5. This PD also exhibits a fast response speed (rise time: 220 μs, fall time: 240 μs). This work provides a novel strategy to fabricate a cost‐effective multifunctional photodetector for future advanced optoelectronic system.

Enhanced Detectivity and Suppressed Dark Current of Perovskite-InGaZnO Phototransistor via PCBM Interlayer.

Reduced graphene oxide-induced crystallization of CuPc interfacial layer for high performance of perovskite photodetectors

Capping IGZO Transistor with MAPbI3 Perovskite Light Absorber

Hybrid Field-Effect Transistors and Photodetectors Based on Organic Semiconductor and CsPbI3 Perovskite Nanorods Bilayer Structure

Optimization of PMMA:PCBM Interlayer for MAPbI3/IGZO Phototransistor

Enhanced UV–visible Detection of InGaZnO Phototransistors Via CsPbBr3 Quantum Dots

25.2: High Detectivity Perovskite‐IGZO Phototransistor with Tunable Photoconductive Gain

Monolithic Integration of Perovskite Photoabsorbers with IGZO Thin‐Film Transistor Backplane for Phototransistor‐Based Image Sensor

Additive Modulated Perovskite Microstructures for High Performance Photodetectors

Oxide Semiconductor Phototransistor with Organolead Trihalide Perovskite Light Absorber

High-Detectivity and Stable Planar MAPbI₃/IDT-BT Photodetectors with Assisted MoO₃ Interlayer

Improving the Performance of N-I-p Perovskite Photodetectors Via Bathocuproine Electron Transport Interlayer

High-Detectivity and Stable Planar MAPbI3/IDT-BT Photodetectors With Assisted MoO3 Interlayer

Organolead Trihalide Perovskite As Light Absorber for IGZO Phototransistor

The Effect of PC61BM Electrode Interlayer on Bandgap Tunable Perovskite Photodetectors

Effect of Metal-Organic Frameworks with Different Ligand Structures (ZIF-11 & ZIF-23) on the Optoelectronic Performance of Perovskite Photodetectors

A Design Strategy for Low‐Cost Single/Dual‐Band Photodetector: Bulk Heterojunction and Interface Engineering

Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels*

Narrow Bandgap Pb‐Sn Perovskite/InGaZnO Hybrid Phototransistor for Near‐Infrared Detection

Perovskite Photodetectors Based on p-i-n Junction With Epitaxial Electron-Blocking Layers

A High-Responsivity 30 Μm × 30 Μm Perovskite-IGZO Phototransistor for Weak Light Detection