Abstract:A patterning process with assistant of PI paste is developed and through it the quasi 2D perovskite films can be patterned into an arbitrary shape without damage. This convenient process can reach an accuracy of at least 20 micrometers and is applied to realize a kind of quasi‐2D PSK/IGZO phototransistor array to demonstrate the potential imaging application. Monolithic integration of perovskite materials and their optoelectronic devices with well‐developed thin‐film transistor (TFT) backplane is leading to new applications in displays and image sensors. Herein, a scalable polyimide assisted patterning approach for monolithic integration of perovskite based high‐sensitive phototransistor array on indium gallium zinc oxide (IGZO) active matrix backplane is introduced. Polyimide vias are first formed by conventional photolithography process, through which uniform perovskite films of arbitrary patterns with feature size less than 20 μm are fabricated by spin‐on‐patterning method. Using this technique, patterns of quasi 2D perovskite photoabsorbing layer are precisely deposited onto the channel area of the photosensing IGZO TFT, forming high‐performance phototransistors with responsivity and detectivity reaching 835.7 A W−1 and 5.4 × 1012 Jones, respectively. An image sensor with 8 × 8 pixels array containing both photosensing perovskite/IGZO transistors and switching IGZO transistors is demonstrated, in which the switching IGZO transistor elements on the backplane are protected by the non‐patterned region of the polyimide encapsulation layer. This whole fabrication process is compatible with TFT manufacturing process and will significantly reduce the cost needed for constructing next generation high‐resolution image sensors.

Capping IGZO Transistor with MAPbI3 Perovskite Light Absorber

Enhanced Detectivity and Suppressed Dark Current of Perovskite-InGaZnO Phototransistor via PCBM Interlayer.

Monolithic Integration of Perovskite Photoabsorbers with IGZO Thin‐Film Transistor Backplane for Phototransistor‐Based Image Sensor

25.2: High Detectivity Perovskite‐IGZO Phototransistor with Tunable Photoconductive Gain

Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels*

Enhanced UV–visible Detection of InGaZnO Phototransistors Via CsPbBr3 Quantum Dots

Organolead Trihalide Perovskite As Light Absorber for IGZO Phototransistor

Hybrid Field-Effect Transistors and Photodetectors Based on Organic Semiconductor and CsPbI3 Perovskite Nanorods Bilayer Structure

Pixellated Perovskite Photodiode on IGZO Thin Film Transistor Backplane for Low Dose Indirect X-Ray Detection

Oxide Semiconductor Phototransistor with Organolead Trihalide Perovskite Light Absorber

A High-Responsivity 30 Μm × 30 Μm Perovskite-IGZO Phototransistor for Weak Light Detection

Design and Fabrication of Photo-Sensitive Thin-Film Transistors with IGZO and Organic Photo-Absorber

High‐Performance Tin‐Halide Perovskite Transistors Enabled by Multiple A‐Cation Engineering

Enhancing photodetection performance of UV photodetectors with stacked Pt/NiO dual capping layers on IGZO thin-film transistors

Optimization of PMMA:PCBM Interlayer for MAPbI3/IGZO Phototransistor

High-performance hysteresis-free perovskite transistors through anion engineering

Spin‐On‐Patterning of Sn–Pb Perovskite Photodiodes on IGZO Transistor Arrays for Fast Active‐Matrix Near‐Infrared Imaging

Narrow Bandgap Pb‐Sn Perovskite/InGaZnO Hybrid Phototransistor for Near‐Infrared Detection

Performance Enhancement Of Carbon Nanotube Thin Film Transistor By Yttrium Oxide Capping

High Performance Indium‐Gallium‐Zinc Oxide Thin Film Transistor via Interface Engineering

Enhanced performances of a-IGZO TFTs with oxide passivation layers fabricated by hollow cathode assisted PLD