IGZO Phototransistor with Ultrahigh Sensitivity at Broad Spectrum Range (450–950 nm) Realized by Incorporating PM6:Y6 Bulk Heterojunction
Hyung Min Ko,Seok Joo Yang,Jinpyeo Jeung,Hyuk Park,Taewon Seo,Seung‐Mo Kim,Byoung Hun Lee,Kilwon Cho,Yoonyoung Chung
DOI: https://doi.org/10.1002/adom.202303152
IF: 9
2024-02-22
Advanced Optical Materials
Abstract:Herein, highly photoresponsive PM6:Y6/IGZO hybrid phototransistor with a broad spectral range of 450–950 nm is reported, which demonstrates ultrahigh photoresponsivity of 2.2 × 108 A W−1 and specific detectivity of 9.8 × 1016 Jones under light intensity at only 1.03 nW cm−2. The effect of PM6:Y6 blending ratio, thickness, and solvent additive treatment on device performance is studied. Among various photoresponsive materials, organic materials have gained interest due to their low cost, large‐scale yields, and compatibility with flexible substrates. However, their low photoresponsivity compared to inorganic counterparts has been consistently pointed out as a limitation. To address this issue, a highly photoresponsive PM6:Y6/IGZO hybrid phototransistor is presented with a broad spectral range of 450–950 nm. The photoresponse of the device is enhanced by controlling the PM6:Y6 blending ratio, active layer thickness, and solvent additive treatment. The PM6:Y6 blending ratio and thickness are optimized to promote charge separation and efficient charge transport, leading to a significant increase in photoresponsivity. Moreover, solvent additives are employed to improve the crystallinity of the PM6:Y6 film, which further enhanced the charge transport. As a result, the PM6:Y6/IGZO hybrid phototransistor exhibited exceptional performance, with an ultrahigh photoresponsivity of 2.2 × 108 A W−1 and specific detectivity of 9.8 × 1016 Jones under 750 nm light with an intensity of only 1.03 nW cm−2. These results highlight the potential of organic materials in developing high‐performance phototransistors.
materials science, multidisciplinary,optics