Narrow Bandgap Pb‐Sn Perovskite/InGaZnO Hybrid Phototransistor for Near‐Infrared Detection

Lizhi Yan,Xingzhi Du,Chuan Liu,Shengdong Zhang,Hang Zhou
DOI: https://doi.org/10.1002/pssa.201900417
2019-01-01
Abstract:Inorganic-organic hybrid perovskite thin films have attracted significant attention for developing new types of optoelectronic devices due to their superb optoelectronic properties. Herein, a hybrid phototransistor for near-infrared (NIR) detection is constructed by capping a narrow bandgap Pb-Sn perovskite layer on top of an indium gallium zinc oxide (IGZO) thin-film transistor (TFT), with a C-60 interlayer acting as the electron transporting layer. The Pb-Sn perovskite layer is precisely spin patterned onto the IGZO TFTs' channel region via a hydrophobic perfluoro(1-butenyl vinyl ether) (CYTOP) photolithography process. In this configuration, a high-detectivity (2.24 x 10(10) Jones at 900 nm) perovskite-C-60-IGZO hybrid infrared phototransistor is achieved, and the narrow bandgap perovskite-IGZO hybrid phototransistor has a sensitive photoresponse down to 1100 nm.
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