Solution-Processed P3HT:PbS-Based NIR Photodetector With FET Configuration

Dan Yang,Qian-Xiong Zhou
DOI: https://doi.org/10.1109/LPT.2019.2957384
IF: 2.6
2020-01-15
IEEE Photonics Technology Letters
Abstract:A solution-processed near-infrared (NIR) photodetector based on a mixture of PbS colloidal quantum dots (CQDs) and Poly(3-hexylthiophene) (P3HT) was presented. In a reverse field-effect transistor (FET) device configuration Au(S,D)/P3HT:PbS/PMMA/Al(G), uniform-sized and well-dispersed PbS CQDs were employed as NIR absorbing materials in the active layer. Meanwhile, the poly(methyl methacrylate) (PMMA) dielectric layer could be seen as an encapsulation to enhance the device stability. Herein, high “on/off” current ratio (<inline-formula> <tex-math notation="LaTeX">$I_{on}/I_{off})$ </tex-math></inline-formula> of 10<sup>4</sup> was obtained in dark, and the maximum photosensitivity (<inline-formula> <tex-math notation="LaTeX">$P$ </tex-math></inline-formula>) of 947 was gotten under 200 mW/cm<sup>2</sup> 980 nm illumination. When the irradiance reduced to 0.1 mW/cm<sup>2</sup>, the responsivity (<inline-formula> <tex-math notation="LaTeX">$R$ </tex-math></inline-formula>) and detectivity (<inline-formula> <tex-math notation="LaTeX">$D^{\ast }$ </tex-math></inline-formula>) of the NIR photodetector reached 9.4 mA/W and <inline-formula> <tex-math notation="LaTeX">$2.5\times 10^{11}$ </tex-math></inline-formula> Jones, respectively. Therefore, the P3HT:PbS hybrid FET-based NIR photodetector had shown both relatively high electrical and detecting performance, which provided an experimental foundation and method for the next fabrication of medical infrared detectors and sensors.
Physics,Engineering,Materials Science
What problem does this paper attempt to address?