Enhanced performance of near-infrared- photodetector with PbS-QD-sensitised field-effect transistor

Xiaoxi Yang
DOI: https://doi.org/10.1016/j.optmat.2024.115634
IF: 3.754
2024-08-01
Optical Materials
Abstract:This study investigated a method for enhancing the response speed of PbS quantum dot (QD) near-infrared photodetectors by comprehensively altering the number of QD layers and the annealing temperature of the device. The experiment found that triple QD layers annealed at 100 °C were needed to achieve the optimum overall performance in a PbS QD-sensitised field-effect transistor near-infrared photodetector. When the incident light wavelength was 1064 nm and incident light power was 4.53 ×  10 − 5 W, the photocurrent of the device was 2.47 × 10 − 6 A, responsivity was 0.0546 A/W, detectivity was 3.71 × 10 11 Jones, and decay time was 2.6 ms (VGS = −10 V).
materials science, multidisciplinary,optics
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