On the mechanism to suppress dark current via blending all-inorganic pervoskite precursor for colloidal quantum dots photodetectors

Ying Wu,Shengyi Yang,Feiyang Sun,Xiaoxuan Liu,Zhenheng Zhang,Yi Tang,Yurong Jiang,Bingsuo Zou

DOI: https://doi.org/10.1039/d3tc02894a

IF: 6.4

2023-10-24

Journal of Materials Chemistry C

Abstract:PbS colloidal quantum dots (CQDs) are commonly used for infrared photodetectors due to its broad absorption range into infrared region, size-dependent behavior, facile solution-synthesis processing and excellent optoelectronic properties. However, the conventional hot-injection method used to synthesize PbS CQDs is still complicated, and the device performance of pure PbS CQDs photodetectors is not always very high due to the large density of surface states and the low mobility of the PbS CQDs layer. In this paper, a 'one-step' method was firstly used to synthesize PbS CQDs capped with short chain ligand I (i.e. PbS-I), and then it was blended with all-inorganic perovskite CsPbBr3 precursor as the active layer via a facile solution processing, thus high-performance photodetectors Si/PbS:CsPbBr3/Ag on silicon wafer substrate were obtained after optimizing the volume ratio of PbS to CsPbBr3 precursor, and the underlain physical mechanism is believed to be the surface passivation and the heightened carriers' injection barrier raised by blending CsPbBr3, as a result, a maximum responsivity of 12.97 A/W with a specific detectivity of 6.89×1012 Jones under 4.8 μW/cm2 980 nm illumination at -1 V was obtained, as well as a responsivity of 4.38 A/W with a specific detectivity of 1.44×1013 Jones in self-driven mode.

materials science, multidisciplinary,physics, applied