Abstract:Colloidal quantum dots (CQDs) are promising materials for flexible electronics, light sensing and energy conversion. In particular, as a narrow bandgap semiconductor, lead selenide (PbSe) CQDs have attracted considerable interest due to their potential applications in infrared (IR) optoelectronics such as IR light-emitting diodes (LEDs), photodetectors and solar cells. Solution-processed photodetectors are more attractive owing to their flexible, large-scale and low-cost fabrication, and their performance depends greatly on the film quality and surface morphology. In this study, a high performance solution-processed infrared photodetector based on PbSe CQDs blended with low hole mobility polymer poly(N-vinylcarbazole) (PVK) is presented. In order to obtain a higher device performance, different volume ratios (K = V-PVK/V-PbSe) of PVK (20 mg ml(-1) in chloroform) in PbSe CQDs (15 mg ml(-1) in chlorobenzene) were investigated, and a maximum responsivity and specific detectivity of 2.93 A W-1 and 1.24 x 10(12) jones, respectively, were obtained at V-G = -20 V under 30 mW cm(-2) 980 nm laser illumination for field-effect transistor (FET)-based photodetector Au(S&D)/PbSe : PVK/PMMA/Al(G), in which PbSe : PVK nanocomposite with K = 1 : 2 acts as the active layer and poly (methyl methacrylate) (PMMA) as the dielectric layer. The reasons for the high device performance of PbSe : PVK nanocomposite as an active layer are discussed, in which PbSe nanoparticles were blended with low hole mobility polymer PVK but showed comparable detectivity as that blended with regioregular P3HT. Moreover, all these types of photodetectors are very stable for reverse fabrication using PMMA dielectric layer to shield the active layer from the environment and by inorganic ligand exchange treatment on the active layer.

Field-effect transistor-based solution-processed colloidal quantum dot photodetector with broad bandwidth into near-infrared region

Solution-Processed PbSe Colloidal Quantum Dot-Based Near-Infrared Photodetector

Solution-Processed P3HT:PbS-Based NIR Photodetector With FET Configuration

High-performance Solution-Processed Colloidal Quantum Dots-Based Tandem Broadband Photodetectors with Dielectric Interlayer

Solution-processed P3HT-based Photodetector with Field-Effect Transistor Configuration

High-Performance Near-Infrared Photodetector Based on PbS Colloidal Quantum Dots/ZnO-Nanowires Hybrid Nanostructures

Highly sensitive SWIR photodetector using carbon nanotube thin film transistor gated by quantum dots heterojunction

High-sensitivity Broadband Colloidal Quantum Dot Heterojunction Photodetector for Night-Sky Radiation

Ultrasensitive Organic‐Modulated CsPbBr3 Quantum Dot Photodetectors Via Fast Interfacial Charge Transfer

Carbon Nanotube Transistor with Colloidal Quantum Dot Photosensitive Gate for Ultrahigh External Quantum Efficiency Photodetector

Significant Enhancement of Single-Walled Carbon Nanotube Based Infrared Photodetector Using PbS Quantum Dots

Planar Cation Passivation on Colloidal Quantum Dots Enables High-Performance 0.35-1.8 µm Broadband TFT Imager

Ultra-sensitive solution-processed broadband photodetectors based on vertical field-effect transistor.

Silicon-based PbS-CQDs infrared photodetector with high sensitivity and fast response

Solution-Processed High-Performance Colloidal Quantum Dot Tandem Photodetectors On Flexible Substrates

Ultra-sensitive tandem colloidal quantum-dot photodetectors

Planar Cation Passivation on Colloidal Quantum Dots Enables High-Performance 0.35-1.8 Μm Broadband TFT Imager

Heterojunction Infrared Photodiodes with High Dynamic Range Based on Lead Sulfide Quantum Dot and Zinc Oxide Nanomembrane

Sulfurized Colloidal Quantum Dot/Tungsten Disulfide Multi‐Dimensional Heterojunction for an Efficient Self‐Powered Visible‐to‐SWIR Photodetector

High Performance Solution-Processed Infrared Photodetector Based On Pbse Quantum Dots Doped With Low Carrier Mobility Polymer Poly(N-Vinylcarbazole)

On the mechanism to suppress dark current via blending all-inorganic pervoskite precursor for colloidal quantum dots photodetectors