Abstract:In this work, the use of hybrid semiconducting thin film consisting of P3HT and carbon nanotubes is explored. Due to the unique method of synthesis shown, where the P3HT is heterogeneously crystallized onto the CNTs directly, an ultra‐high responsivity in the visible range is able to be achieved. Photodetectors are a key sensing component in enabling emerging technologies. For weak light detection, phototransistors with high responsivity are needed. Furthermore, the ability to fabricate phototransistors using solution processing techniques will enable new form factors, including flexible and large‐area devices. In this work, a novel approach for synthesizing a photosensitive organic/inorganic hybrid semiconducting thin film through solution processing is introduced. The approach involves hierarchical patterning of semiconducting carbon nanotubes (CNTs) with poly(3‐hexylthiophene‐2,5‐dyl) (P3HT) through solution‐phase heterogeneous crystallization. The fabricated hybrid phototransistors are qualified through electrical testing at varied illumination profiles within the visible light range. At a wavelength of 470 nm with an optical excitation power of 0.37 μW cm−2, the device exhibits photoresponsivity of 3.53 × 105 AW−1, surpassing other solution‐processed, non‐lead‐containing devices in the literature. The optical response extends from both photogating (low excitation power) and photon‐induced carrier generation (high excitation power). The detectivity of the device is ≈8.7 × 1010 Jones. The transient response includes a rise time of 100 ms and a fall time of 200 ms which is similar to the metrics of other low‐dimensional photodetectors. These findings highlight the prospects of the solution‐processed P3HT/semi‐CNT hybrid platform for advanced photodetection applications with flexible and large‐area form factors.

Solution-Processed Vertical Field-Effect Transistor with Separated Charge Generation and Charge Transport Layers for High-Performance Near-Infrared Photodetection

Ultra-sensitive solution-processed broadband photodetectors based on vertical field-effect transistor.

Solution-processed, Ultrasensitive, High Current Density Vertical Phototransistor Using Porous Carbon Nanotube Electrode

High Performance Solution-Processed Infrared Photodetector Based On Pbse Quantum Dots Doped With Low Carrier Mobility Polymer Poly(N-Vinylcarbazole)

Visible Phototransistors Based on Vertical Nanolayered Heterostructures of SnS/SnS2 P-N and SnSe2/SnS2 N-N Nanoflakes

Field-effect transistor-based solution-processed colloidal quantum dot photodetector with broad bandwidth into near-infrared region

Solution-Processed PbSe Colloidal Quantum Dot-Based Near-Infrared Photodetector

Solution Processable Phototransistors with Ultra‐High Responsivity Enabled by Hierarchical Poly(3‐Hexylthiophene) Carbon Nanotube Composites

High-performance Solution-Processed Colloidal Quantum Dots-Based Tandem Broadband Photodetectors with Dielectric Interlayer

Vertical Architecture Solution-Processed Quantum Dot Photodetectors with Amorphous Selenium Hole Transport Layer

Solution-Processed P3HT:PbS-Based NIR Photodetector With FET Configuration

High Performance Vertical Resonant Photo-Effect-Transistor with an All-Around OLED-Gate for Ultra-Electromagnetic Stability.

A high-performance self-powered photodetector based on solution-processed nitrogen-doped graphene quantum dots/all-inorganic perovskite heterostructures

High Performance and Efficiency Resonant Photo-Effect-Transistor by Near-Field Nano-Strip-Controlled Organic Light Emitting Diode Gate.

Charge-transport Interfacial Modification Enhanced Ultraviolet (Uv)/near-Uv Phototransistor with High Sensitivity and Fast Response Speed

Ultrahigh Detectivity in Spatially Separated Hole/Electron Dual Traps Based Near‐Infrared Organic Phototransistor

Ultrasensitive All-Solution-processed Field-Effect Transistor Based Perovskite Photodetectors with Sol-Gel SiO2 As the Dielectric Layer

Ultrasensitive Ferroelectric Semiconductor Phototransistors for Photon‐Level Detection

Solution-processed P3HT-based Photodetector with Field-Effect Transistor Configuration

Flexible and Air‐Stable Near‐Infrared Sensors Based on Solution‐Processed Inorganic–Organic Hybrid Phototransistors

Enhancing Photocurrent Efficiency in Filter‐Less NIR Organic Photodetectors Through a Photomultiplication‐Inducing Perovskite Quantum Dot Interlayer