Flexible and low-voltage phototransistor based on novel self-assembled phosphonic acids monolayers

Xiaohong Wang,Yingman Zhu,Guiheng Wang,Longzhen Qiu
DOI: https://doi.org/10.1016/j.synthmet.2020.116563
IF: 4
2020-11-01
Synthetic Metals
Abstract:<p>Flexible and low-voltage near-infrared organic phototransistors (NIR OPTs) based on newly developed phosphonic acid (PA) self-assembled monolayers (SAMs) and donor-acceptor polymers diketopyrrolopyrrole-dithienylthieno [3,2-b] thiophene (DPP-DTT) were prepared. Results show that devices exhibit field-effect mobilities up to 0.189 cm<sup>2</sup>V<sup>−1</sup>s<sup>−1</sup>, threshold voltage of −2.25 V and I<sub>on/off</sub> ratio of 7.79 × 10<sup>5</sup>. The devices are highly sensitive to the 650 nm and near-infrared 808 nm light illumination. The maximum photo-/dark-current ratio (P) and the responsivity (R) reaches 4.3 × 10<sup>3</sup>, 11.59 A/W and 2.25 × 10<sup>4</sup>, 0.10 A/W for the 650 nm and 808 nm light illumination, respectively. The azide end groups in the phosphonic acid provide the possibility of diversification for insulating layers of the OFETs.</p>
materials science, multidisciplinary,physics, condensed matter,polymer science
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