Self‐Assembly PbS Quantum Dot‐Conjugated Polymer Hybrid‐Layered Phototransistor Enables SWIR Photodetection with High Detectivity

Zhixiang Jiang,Yuanhong Gao,Wei Hui,Yang Feng,Meili Xu,Jinxiong Li,Feng Jiang,Xiaopeng Zhang,Jianing Wang,Hong Meng,Wei Huang

DOI: https://doi.org/10.1002/adom.202303188

IF: 9

2024-01-01

Advanced Optical Materials

Abstract:Lead sulfide colloid quantum dots (PbS QDs) offer great opportunities to revolutionize large-area short-wave infrared (SWIR) detection technologies due to high absorption coefficients and spectral selectivity. However, a critical issue for QDs-based SWIR detectors is high dark current noise due to thermal carriers and the large amounts of surface defect states induced by the ligand exchange process, which hinders the improvement of the room temperature detectivity and linear dynamic range. Herein, it is demonstrated that these dilemmas can be overcome by adopting a novel hybrid-layered phototransistor device architecture composed of a self-assembly high-mobility organic conduction channel and a bulk heterojunction infrared absorber containing PbS QDs as sensitizers. Strong photo absorption in the photoactive layer creates photogenerated charges that are transferred to the conduction channel, where they recirculate many times due to the long trapped-electron lifetime in the photoactive layer and the high carrier mobility of the channel. Therefore, low dark current noise and high photoconductive gain are achieved by both electrical gating and photodoping for carrier-density modulation of phototransistors. Finally, an optimized SWIR phototransistor device with a low room-temperature dark current of 7 pA and a high detectivity of 8 x 1012 Jones under 1650 nm light illumination is demonstrated. A novel hybrid-layered phototransistor device architecture is composed of a self-assembly high-mobility organic conduction channel and a bulk heterojunction infrared absorber containing PbS QDs as sensitizers. Low dark current noise and high photoconductive gain are achieved, thanks to both electrical gating and photodoping for effective carrier-density modulation of the phototransistors. image