Transparent CsPbBr 3 Quantum Dot Photodetector with a Vertical Transistor Structure

Cong Zhao,Yuan Liu,Liyang Chen,Jingzhou Li,H. Y. Fu,Shixi Zhao,Wen-Di Li,Guodan Wei
DOI: https://doi.org/10.1021/acsaelm.0c00877
IF: 4.494
2020-12-17
ACS Applied Electronic Materials
Abstract:Though flexible and transparent electronics has increasingly attracted attention, there are still challenges in developing vertical phototransistors to obtain photons efficiently and maintaining the gate tunable property of the transparent substrate. The active layers of the CsPbBr<sub>3</sub> quantum dot are sandwiched between an organic blend layer of poly-TPD:PCBM (1:1) and an orthogonally binary dielectric layer of polymethyl methacrylate and polyacrylic acid. The energy-favorable interface between the organic blend film and CsPbBr<sub>3</sub> quantum dot is used for effective exciton dissociation and charge separation, whereas the orthogonally binary dielectric layer on the transparent indium tin oxide substrate is incorporated for effective gate tunable property. The obtained CsPbBr<sub>3</sub> quantum dot-based photodetector has a transparency of up to 93% in the visible light range with a responsivity of 80 mA/W and a detectivity of 2.2 × 10<sup>11</sup> Jones. This work offers pioneering opportunities in emerging wearable optoelectronics for light detection with sensitivity and transparency.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsaelm.0c00877?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsaelm.0c00877</a>.Additional transmittance investigation, dielectric layer's destruction in chlorobenzene investigation, flexible device with our transistor structure, and related calculations of COMSOL simulation (<a class="ext-link" href="/doi/suppl/10.1021/acsaelm.0c00877/suppl_file/el0c00877_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,engineering, electrical & electronic
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