Carbon Nanotube Transistor with Colloidal Quantum Dot Photosensitive Gate for Ultrahigh External Quantum Efficiency Photodetector

Jianfu Han,Kai Huang,Xuanguang Su,Xiaofei Xiao,Xuemin Gong,Haibin Wang,Juexian Cao
DOI: https://doi.org/10.1021/acsnano.3c02064
IF: 17.1
2023-05-12
ACS Nano
Abstract:PbS colloidal quantum dots (CQDs) are promising building block for developing the next-generation high-performance near-infrared (NIR) photodetector. However, due to the surface ligand isolation and surface defects, PbS CQDs usually suffer from low carrier mobility, which limits further optimization of PbS CQDs-based optoelectronic devices. Here, the combination of PbS CQD photodiode and carbon nanotube (CNT) film field-effect transistor (FET) achieves a transistorized NIR photodetector with a...
materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
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