Vertically Stacked Au/PbS/CsPbCl 3 Phototransistors for Plasmon-Enhanced High-Performance Broadband Photodetection

Kai Li,Xinhong Zhao,Yongchu Fang,Yu Tao,Xiaoxian Song,Haiting Zhang,Huaqing Yu,Peng Wang
DOI: https://doi.org/10.1021/acsaelm.0c00872
IF: 4.494
2020-12-10
ACS Applied Electronic Materials
Abstract:All inorganic perovskites have been regarded as attractive optoelectronic materials due to their tunable properties, good stability, and low-temperature processing techniques. However, the relatively low responsivity and narrow response range still hinder their potential for optoelectronic applications. In this work, vertically stacked Au/PbS/CsPbCl<sub>3</sub> phototransistors were fabricated by a low-temperature solution method. The phototransistors achieved a wide spectral photodetection of 300–1100 nm. The phototransistors had an effective electron mobility of 654.75 cm<sup>2</sup>/V s without light illumination. Under 532 nm incident light, due to the enhancement of plasmonic Au nanoparticles, the phototransistors demonstrated a remarkable responsivity of 3892 A/W, a high detectivity of 3.29 × 10<sup>13</sup> Jones, as well as an ultrahigh external quantum efficiency of 10<sup>6</sup>%. In addition, the phototransistors also exhibited excellent stability in air. The results demonstrate that a vertically stacked Au/PbS/CsPbCl<sub>3</sub> architecture is a promising candidate for broadband photodetection.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsaelm.0c00872?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsaelm.0c00872</a>.Reagents and materials; precursor solution of CsPbCl3 NPLs; precursor solution of PbS QDs; characterization; and effective carrier mobility (<a class="ext-link" href="/doi/suppl/10.1021/acsaelm.0c00872/suppl_file/el0c00872_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,engineering, electrical & electronic
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