Abstract:Thin‐film semiconductors offer attractive opportunities for achieving optoelectronic functionalities that are not easily accessible with conventional bulk semiconductors. This paper presents a tunable dual‐band photodetector for multispectral sensing in the visible to short‐wave infrared range. Organic and inorganic colloidal quantum dot absorbers are integrated into a single vertically stacked structure to leverage the best features of both material systems.Multispectral imaging in short‐wave infrared (SWIR) is a powerful analytical technique because of the distinctive spectral properties of many materials in this range. However, conventional SWIR image sensors are beyond the reach of many applications due to their high price. Image sensors based on colloidal quantum dots (CQDs) are expected to deliver affordable infrared image sensors to wider application scope. So far, the demonstrated CQD image sensors do not have a multispectral capability. Here, a dual‐band photodetector based on PbS CQDs is presented. By engineering the surface of CQDs, two oppositely facing pn junctions are fabricated in series, which enable sensing in two spectral channels. Furthermore, an optical cavity is designed that reduces the spectral crosstalk between the two channels and simultaneously enables wavelength‐tunability in one channel. Finally, an organic photodiode (OPD) is integrated with a PbS CQD photodiode in a single device, leveraging a high sensitivity in visible and near‐infrared (NIR) characteristics for OPDs. The presented photodetectors exhibit low dark current below 500 nA cm−2 at 1 V bias, a fast response measured in microseconds, as well as high external quantum efficiency, reaching 70% in NIR and 30% in SWIR.

Ultra-sensitive Colloidal Quantum Dot Infrared Photodiode Exceeding 100,000% of External Quantum Efficiency via Photomultiplication.

A Colloidal-Quantum-Dot Infrared Photodiode with High Photoconductive Gain.

Ultra-sensitive tandem colloidal quantum-dot photodetectors

Large Photomultiplication by Charge-Self-Trapping for High-Response Quantum Dot Infrared Photodetectors

High-Performance Near-Infrared Photodetector Based on PbS Colloidal Quantum Dots/ZnO-Nanowires Hybrid Nanostructures

Passivating {100} Facets of PbS Colloidal Quantum Dots via Perovskite Bridges for Sensitive and Stable Infrared Photodiodes

Solution-Processed PbSe Colloidal Quantum Dot-Based Near-Infrared Photodetector

Giant Colloidal Quantum Dot/α-Ga 2 O 3 Heterojunction for High Performance UV-Vis-IR Broadband Photodetector

Heterojunction Infrared Photodiodes with High Dynamic Range Based on Lead Sulfide Quantum Dot and Zinc Oxide Nanomembrane

Organic Amine-Bridged Quasi-2D Perovskite/PbS Colloidal Quantum Dots Composites for High-Gain Near-Infrared Photodetectors

Ultrasensitive Organic‐Modulated CsPbBr3 Quantum Dot Photodetectors Via Fast Interfacial Charge Transfer

High-sensitivity Broadband Colloidal Quantum Dot Heterojunction Photodetector for Night-Sky Radiation

Photodetectors Based on Lead Sulfide Quantum Dot and Organic Absorbers for Multispectral Sensing in the Visible to Short‐Wave Infrared Range

Field-effect transistor-based solution-processed colloidal quantum dot photodetector with broad bandwidth into near-infrared region

High-performance Solution-Processed Colloidal Quantum Dots-Based Tandem Broadband Photodetectors with Dielectric Interlayer

Optimization of Charge Carrier Extraction in Colloidal Quantum Dots Short‐Wave Infrared Photodiodes through Optical Engineering

Double‐ended Passivator Enables Dark‐current‐suppressed Colloidal Quantum Dot Photodiodes for CMOS‐integrated Infrared Imagers

Sub-nanosecond Infrared Photodetection using III-V Colloidal Quantum Dots

On the Mechanism to Suppress Dark Current Via Blending with an All-Inorganic Perovskite Precursor in Colloidal Quantum Dot Photodetectors

Enhanced Performance of Ultraviolet Photodetector Modified by Quantum Dots with High Responsivity and Narrow Detection Region

High-Performance Colloidal Quantum Dot Photodiodes Via Suppressing Interface Defects