High Sensitivity Hybrid PbS CQD-TMDC Photodetectors up to 2 $μ$m

Onur Özdemir,Iñigo Ramiro,Shuchi Gupta,Gerasimos Konstantatos

DOI: https://doi.org/10.1021/acsphotonics.9b00870

2020-03-26

Abstract:Recent approaches to develop infrared photodetectors characterized by high sensitivities, broadband spectral coverage, easy integration with silicon electronics and low cost have been based on hybrid structures of transition metal dichalcogenides (TMDCs) and PbS colloidal quantum dots (CQDs). However, to date, such photodetectors have been reported with high sensitivity up to 1.5 $\mu$m. Here we extend the spectral coverage of this technology towards 2 $\mu$m demonstrating for the first time compelling performance with responsivities 1400 A/W at 1.8 $\mu$m with 1V bias and detectivities as high as $10^{12}$ Jones at room temperature. To do this we studied two TMDC materials as a carrier transport layer, tungsten disulfide (WS$_2$) and molybdenum disulfide (MoS$_2$) and demonstrate that WS$_2$ based hybrid photodetectors outperform those of MoS$_2$ due to a more adequate band alignment that favors carrier transfer from the CQDs.

Applied Physics,Instrumentation and Detectors

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to develop a photodetector with high sensitivity, broadband spectral coverage, easy integration with silicon electronics and low cost in the infrared spectral range. Specifically, the authors aim to extend the spectral response range of this hybrid photodetector to 2 µm and improve its performance at room temperature, especially the responsivity and detectivity, by combining transition - metal dichalcogenides (TMDCs) and lead sulfide colloidal quantum dots (PbS CQDs).

### Background
Currently, commercial infrared detectors are costly due to their epitaxial growth methods and complex non - monolithic integration technologies. Moreover, the performance of these detectors usually needs to be optimized under cooling conditions, which increases their integration complexity, power consumption and miniaturization difficulty. Therefore, it is of great significance to develop an infrared photodetector that can work at room temperature, has high sensitivity, broadband spectral coverage and low cost.

### Research Objectives
1. **Expand the spectral response range**: Extend the spectral response range of the existing hybrid photodetectors based on TMDCs and PbS CQDs from 1.5 µm to 2 µm.
2. **Improve performance**: Achieve high responsivity and high detectivity, especially at the wavelength of 1.8 µm.
3. **Optimize material selection**: Study the effects of different TMDC materials (such as WS₂ and MoS₂) as carrier transport layers to determine the best material combination.

### Main Results
- **Spectral response range**: Successfully extended the spectral response range to 2 µm.
- **Responsivity**: At the wavelength of 1.8 µm, the responsivity of the WS₂ - based hybrid photodetector reaches 1400 A/W.
- **Detectivity**: The detectivity of the WS₂ - based hybrid photodetector at room temperature is as high as 10¹² Jones.
- **Material selection**: Research shows that the WS₂ - based hybrid photodetector is superior to the MoS₂ - based hybrid photodetector due to a more appropriate energy band arrangement.

### Conclusion
By combining WS₂ and PbS CQDs, the authors have successfully developed a high - performance hybrid photodetector with a spectral response range of up to 2 µm and excellent responsivity and detectivity. This result provides new ideas for developing low - cost, high - performance infrared photodetectors.