Abstract:Two-dimensional (2D) photodetectors based on semiconducting transitional metal chalcogenides (TMDs) have attracted much attention because of its unique mechanical and opto-electronic properties which can be integrated into nanoscale-sized opto-electronic devices and complex circuits. However, the photodetection range of 2D TMDs materials based detectors are generally limited within the visible range due to its intrinsic relatively large band-gap. In addition, 2D TMDs materials also suffers from weak light absorption inherited from their atomically thin layers, resulting in a photoresponsivity that can be further improved. Herein, by combining 2D MoS2 with zero-dimensional (0D) PbSe quantum dots (QDs) and Au nanocrystals (NCs), a novel 2D-0D photo detector (i.e., MoS2/PbSe@Au) is fabricated. Our MoS2/PbSe@Au photodetector exploits the 2D MoS2 as the conduction channels and PbSe@Au NCs as light sensitizer, which promote the absorption of the entire device and enable appreciable photodetection extending to the near-infrared (NIR). Prominently, the mixed-dimensional photodetector exhibits high responsivity of 1.22 A/W and detectivity of 1.56*10(9) Jones (cm.Hz(1/2).W-1) at NIR (e.g., 1064 nm) compared with the MoS2 photodetector with PbSe QDs only, which are ascribed to the more efficient two-step charge transfer process between PbSe and MoS2 with the presence of Au NCs. We further identify the new carrier multiplication mechanism when comparing the photoresponse of our photodetectors at 405 nm and 635 nm. We found the extremely high EQE of MoS2/PbSe@Au photodetector at the wavelength of 405 nm (268.1%) could be ascribed to the synergism of carrier multiplication (CM) in PbSe QDs and the photo gating effect induced by Au nanoparticles. Our study demonstrates that the novel mixed-dimensional photodetectors based on CVD-grown MoS2 may provide a new route for designing and realizing high-performance optoelectronic devices with harvesting merits of hybrid nanomaterials.

MoS2 -HgTe Quantum Dot Hybrid Photodetectors beyond 2 µm

Enhanced Visible to Near-Infrared Photodetectors Made from MoS2-based Mixed-Dimensional Structures

High-Performance 1D CdS/2D Te Heterojunction Photodetector

A New Strategy to Improve the Performance of MoS2-based 2D Photodetector by Synergism of Colloidal CuInS2 Quantum Dots and Surface Plasma Resonance of Noble Metal Nanoparticles

Ultrasensitive Hybrid MoS2-ZnCdSe Quantum Dot Photodetectors with High Gain

Hybrid 2D-QD MoS2 PbSe Quantum Dot Broadband Photodetectors with High-Sensitivity and Room-Temperature Operation at 2.5 μm

High Sensitivity Hybrid PbS CQD-TMDC Photodetectors up to 2 $μ$m

Mercury Telluride Quantum Dot Based Phototransistor Enabling High-Sensitivity Room-Temperature Photodetection at 2000 nm.

Low-Noise Te/MoTe2 Heterojunction Waveguide-Integrated Photodetector

High Responsivity Photodetector Based on Monolayer Molybdenum Disulfide (MoS 2 )

High-Sensitivity 2D MoS2/1D MWCNT Hybrid Dimensional Heterostructure Photodetector

Colloidal HgTe Quantum Dot/Graphene Phototransistor with a Spectral Sensitivity Beyond 3 µm

MoS2 Based Photodetectors: A Review

Very long wave infrared quantum dot photodetector up to 18 μm

Ligand-Engineered HgTe Colloidal Quantum Dot Solids for Infrared Photodetectors

A Dual-gate MoS2 Photodetector Based on Interface Coupling Effect

MoS2/HfO2/Silicon‐On‐Insulator Dual‐Photogating Transistor with Ambipolar Photoresponsivity for High‐Resolution Light Wavelength Detection

High performance photodetector based on few-layer MoTe2/CdS0.42Se0.58 flake heterojunction

Band-engineered dual-band visible and short-wave infrared photodetector with metal chalcogenide colloidal quantum dots

Synergism in Binary Nanocrystals Enables Top-Illuminated HgTe Colloidal Quantum Dot Short-Wave Infrared Imager

MoS 2 /Silicon-on-insulator Heterojunction Field-Effect-Transistor for High-Performance Photodetection