Abstract:Two-dimensional (2D) layered organic-inorganic perovskites have great potential for fabricating field-effect transistors due to their unique structure that enables the horizontal transport of charge carriers in metal-halide octahedra, resembling the transport behavior in semiconducting channels. Their electronic band structures are mainly dominated by the metal-halide octahedra, which eventually determine the optical and electrical characteristics, whereas organic cations have no direct contributions but would impact the electronic structures via distorting the octahedra. So far, high performance has been achieved in 2D Sn perovskites compared to their Pb counterparts because the intrinsic differences of Sn promote transport properties. The champion hole mobility has been obtained in single-ring aromatic phenylethylammonium tin iodide perovskite [(PEA)2SnI4]. However, simple aliphatic monoammonium tin perovskites and their device applications have rarely been reported. Herein, 2D layered n-butylammonium tin iodide perovskite [(BA)2SnI4] thin films have been synthesized by a spin-coating approach. A structural phase transition occurs at about 225 K in the films, accompanied by the changes in the photoluminescence peak and exciton binding energy. Longitudinal optical (LO) phonons are found to govern the scattering of charge carriers and excitons via the Fröhlich interactions in the temperature range 77-300 K. The first-principles calculations predict that the perovskite has excellent transport characteristics comparable to those of molybdenum disulfide (MoS2) and methylammonium lead iodide perovskite (MAPbI3). The (BA)2SnI4 thin film field-effect transistors constructed on polymer dielectrics with a maximum hole mobility of 0.03 cm2 V-1 s-1 in ambient conditions have been successfully demonstrated for the first time. Our findings not only offer a deep insight into the physical properties of 2D layered aliphatic monoammonium tin perovskite thin films but also provide important experimental and theoretical guidance for their potential applications in lateral-type flexible optoelectronic devices.

High-performance hysteresis-free perovskite transistors through anion engineering

High‐Performance Tin‐Halide Perovskite Transistors Enabled by Multiple A‐Cation Engineering

Investigation of Electrode Electrochemical Reactions in CH3NH3PbBr3 Perovskite Single‐Crystal Field‐Effect Transistors

Modulation of vacancy-ordered double perovskite Cs2SnI6 for air-stable thin-film transistors

A solvent-based surface cleaning and passivation technique for suppressing ionic defects in high-mobility perovskite field-effect transistors

High‐Performance P‐Channel Tin Halide Perovskite Thin Film Transistor Utilizing a 2D–3D Core–Shell Structure

Suppressing Ion Migration in Metal Halide Perovskite Via Interstitial Doping with a Trace Amount of Multivalent Cations

Significantly suppressing ion migration in metal halide perovskites via trace of multivalent interstitial doping

Charge transport and ion migration in perovskite-incorporated conjugated polymer semiconductor

Sodium Incorporation for Enhanced Performance of Two-Dimensional Sn-Based Perovskite Transistors.

A novel TFT with organic-inorganic hybrid perovskite channel layer

Room‐Temperature Halide Perovskite Field‐Effect Transistors by Ion Transport Mitigation

Ambient−Stable 2D Dion−Jacobson Phase Tin Halide Perovskite Field−Effect Transistors with Mobility Over 1.6 Cm2 V−1 S−1

The intrinsic (trap-free) transistors based on perovskite single crystals with self-passivated surfaces

Ferroelectric Wide-Bandgap Metal Halide Perovskite Field-Effect Transistors: Toward Transparent Electronics

Approaching Theoretical Limits in The Performance of Printed P‐Type Cui Transistors via Room Temperature Vacancy Engineering

Two-Dimensional Layered Simple Aliphatic Monoammonium Tin Perovskite Thin Films and Potential Applications in Field-Effect Transistors

Enhanced Detectivity and Suppressed Dark Current of Perovskite-InGaZnO Phototransistor via PCBM Interlayer.

Performance Improvement of Amorphous Thin-Film Transistors with Solution-Processed InZnO/InMgZnO Bilayer Channels

Halide Perovskites: A New Era of Solution‐Processed Electronics

Performance Enhancement of 2D Tin-Halide Perovskite Transistors via Molecule-Assisted Grain Boundary Passivation and Hole Doping