Abstract:The dimensionality of semiconductors has a crucial role in determining their properties. Recently, metal halide perovskites have been demonstrated with many exciting applications, attracting wide attention to further their development for advanced optoelectronics, such as photovoltaics, photodetectors, light-emitting diodes, and lasers. At length scales down to nanoscale regimes, surface features as well as quantum confinement effects become dominant in regulating the material properties of perovskite materials. In past years, our group focus on the synthesis and characterization of metal halide perovskites with different configurations, ranging from bulk films, microplates, nanosheets, to nanowires. The corresponding physical properties and device applications were also systematically studied based on their widely tunable dimensionality, morphologies, and compositions. Specifically, for perovskite bulk films, surface defects and bulk structural order significantly affect their device performance. Through optimizing processing techniques, self-assembled quasi-2D perovskite films with graded phase distribution were successfully prepared. Gradient type-II band alignments along the out-of-plane direction of perovskites with spontaneous separation of photo-generated electrons and holes are obtained, which is later employed to construct self-powered vertical-structure photodetectors for the first time. Without any driving voltage, the device exhibited impressive performance with the responsivity up to 444 mA/W and ultrashort response time down to 52 μs. In addition, to assess the intrinsic material properties of crystalline perovskites, freestanding MAPbI 3 nanosheets and lead-free Cs 3 Sb 2 I 9 microplates were fabricated by two-step chemical vapor deposition method, in which excellent optoelectronic performance (e.g., responsively of MAPbI 3 nanosheet is measured to be 40 A/W) together with ultra-fast response speed (down to 58 μs) and superior thermal stability were obtained. For nanostructured perovskites, understanding the dimensional features and their impact on the materials and devices is becoming increasingly important. Lately, we reported the direct vapor-liquid-solid growth of single-crystalline all-inorganic lead halide perovskite (i.e., CsPbX 3 ; X = Cl, Br, or I) NWs. These NWs exhibited high-performance photodetection with the responsivity exceeding 4489 A/W and detectivity over 7.9 × 10 12 Jones toward the visible light regime. Field-effect transistors based on individual CsPbX 3 NWs were also fabricated to show the impressive carrier mobility of 3.05 cm 2 /Vs, being higher than other all-inorganic perovskite devices. Besides, the realization of high-mobility CsPbBr 3 NW devices is reported via a simple surface charge transfer doping strategy. After MoO 3 decoration and device fabrication, the hole mobility of CsPbBr 3 /MoO 3 core-shell NW device is significantly enhanced to 23.3 cm 2 /Vs. All these results provide important guidelines for the further improvement of these perovskite nanostructures for practical utilization.

The intrinsic (trap-free) transistors based on perovskite single crystals with self-passivated surfaces

Investigation of Electrode Electrochemical Reactions in CH3NH3PbBr3 Perovskite Single‐Crystal Field‐Effect Transistors

Room‐Temperature Halide Perovskite Field‐Effect Transistors by Ion Transport Mitigation

Electrical and Optoelectrical Dual-Modulation in Perovskite-Based Vertical Field-Effect Transistors

Understanding Charge Transport in All-Inorganic Halide Perovskite Nanocrystal Thin-Film Field Effect Transistors

Epitaxially Stacked 12‐Layer Perovskite Oxide Heterostructure as a Double‐Level Double‐Gate Field‐Effect Transistor

A solvent-based surface cleaning and passivation technique for suppressing ionic defects in high-mobility perovskite field-effect transistors

Charge Transport in 2D Layered Mixed Sn–Pb Perovskite Thin Films for Field‐Effect Transistors

Ambient−Stable 2D Dion−Jacobson Phase Tin Halide Perovskite Field−Effect Transistors with Mobility Over 1.6 Cm2 V−1 S−1

Application of Perovskite‐Structured Materials in Field‐Effect Transistors

Ferroelectric Wide-Bandgap Metal Halide Perovskite Field-Effect Transistors: Toward Transparent Electronics

Perovskite Core–Shell Nanowire Transistors: Interfacial Transfer Doping and Surface Passivation

Transferrable CsPbBr3 Perovskite Single-Crystalline Films for Visible-Wavelength Photodetectors

One-Step Co-Evaporation of All-Inorganic Perovskite Thin Films with Room-Temperature Ultralow Amplified Spontaneous Emission Threshold and Air Stability.

Photoinduced Nonvolatile Memory Transistor Based on Lead‐Free Perovskite Incorporating Fused Π‐Conjugated Organic Ligands

Organic–Inorganic Hybrid Perovskite Photosensitive Field‐Effect Transistor Enabled by Poly(3‐Hexylthiophene‐2,5‐Diyl) Channel Layer

High-performance hysteresis-free perovskite transistors through anion engineering

(Invited) From Bulk to Nanostructured Perovskites

Modulation of vacancy-ordered double perovskite Cs2SnI6 for air-stable thin-film transistors

2D Graphene-Like Pb-Free Perovskite Semiconductor CsSb(Br1-xIx)4 with Quasi-linear Electronic Dispersion and Direct Bandgap Close to Germanium

Hybrid Nanocomposites of All‐Inorganic Halide Perovskites with Polymers for High‐Performance Field‐Effect‐Transistor‐Based Photodetectors: An Experimental and Simulation Study