Abstract:Two-dimensional (2D) layered organic-inorganic perovskites have great potential for fabricating field-effect transistors due to their unique structure that enables the horizontal transport of charge carriers in metal-halide octahedra, resembling the transport behavior in semiconducting channels. Their electronic band structures are mainly dominated by the metal-halide octahedra, which eventually determine the optical and electrical characteristics, whereas organic cations have no direct contributions but would impact the electronic structures via distorting the octahedra. So far, high performance has been achieved in 2D Sn perovskites compared to their Pb counterparts because the intrinsic differences of Sn promote transport properties. The champion hole mobility has been obtained in single-ring aromatic phenylethylammonium tin iodide perovskite [(PEA)2SnI4]. However, simple aliphatic monoammonium tin perovskites and their device applications have rarely been reported. Herein, 2D layered n-butylammonium tin iodide perovskite [(BA)2SnI4] thin films have been synthesized by a spin-coating approach. A structural phase transition occurs at about 225 K in the films, accompanied by the changes in the photoluminescence peak and exciton binding energy. Longitudinal optical (LO) phonons are found to govern the scattering of charge carriers and excitons via the Fröhlich interactions in the temperature range 77-300 K. The first-principles calculations predict that the perovskite has excellent transport characteristics comparable to those of molybdenum disulfide (MoS2) and methylammonium lead iodide perovskite (MAPbI3). The (BA)2SnI4 thin film field-effect transistors constructed on polymer dielectrics with a maximum hole mobility of 0.03 cm2 V-1 s-1 in ambient conditions have been successfully demonstrated for the first time. Our findings not only offer a deep insight into the physical properties of 2D layered aliphatic monoammonium tin perovskite thin films but also provide important experimental and theoretical guidance for their potential applications in lateral-type flexible optoelectronic devices.

Modulation of vacancy-ordered double perovskite Cs2SnI6 for air-stable thin-film transistors

High‐Performance Tin‐Halide Perovskite Transistors Enabled by Multiple A‐Cation Engineering

High-performance hysteresis-free perovskite transistors through anion engineering

Ultrasmall Blueshift of Near-Infrared Fluorescence in Phase-Stable Cs2SnI6 Thin Films

Achieving Ordered and Stable Binary Metal Perovskite Via Strain Engineering

Two-Dimensional Layered Simple Aliphatic Monoammonium Tin Perovskite Thin Films and Potential Applications in Field-Effect Transistors

Controlled 2D growth approach via atomic layer deposition for improved stability and performance in flexible SnO thin-film transistors

The optoelectronic properties improvement of double perovskites Cs2SnI6 by anionic doping (F−)

Ambient−Stable 2D Dion−Jacobson Phase Tin Halide Perovskite Field−Effect Transistors with Mobility Over 1.6 Cm2 V−1 S−1

A solvent-based surface cleaning and passivation technique for suppressing ionic defects in high-mobility perovskite field-effect transistors

Regulating the phase stability and bandgap of quasi-2D Dion-Jacobson CsSnI3 perovskite via intercalating organic cations

Solution processed lead-free cesium titanium halide perovskites and their structural, thermal and optical characteristics

Dimensional structure regulation of organic–inorganic hybrid perovskite and its application in thin film transistors

Epitaxial Stabilization of Tetragonal Cesium Tin Iodide

A Large Bandgap Organic Salt Dopant for Sn‐Based Perovskite Thin‐Film Transistor

Room‐Temperature Halide Perovskite Field‐Effect Transistors by Ion Transport Mitigation

Charge Transport in 2D Layered Mixed Sn–Pb Perovskite Thin Films for Field‐Effect Transistors

Confronting the Air Instability of Cesium Tin Halide Perovskites by Metal Ion Incorporation

Inorganic Tin Perovskites with Tunable Conductivity Enabled by Organic Modifiers

Optoelectronic and Transport Properties of Vacancy Ordered Double Perovskite Halides: A First-principles Study

Sodium Incorporation for Enhanced Performance of Two-Dimensional Sn-Based Perovskite Transistors.